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Small (Weinheim an Der Bergstrasse, Germany)|July 28, 2010
Coexistence of vapor-liquid-solid and vapor-solid-solid growth modes in Pd-assisted InAs nanowiresStefan Heun, Boya Radha, Daniele Ercolani, et al.Nanotechnology|April 27, 2013
Nanowire-based field effect transistors for terahertz detection and imaging systemsL Romeo, D Coquillat, M Pea, et al.Nano Letters|December 15, 2016
Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core-Shell NanowiresM Rocci, F Rossella, U P Gomes, et al.Sensors (Basel, Switzerland)|July 10, 2019
Conductometric Sensing with Individual InAs NanowiresValeria Demontis, Mirko Rocci, Maurizio Donarelli, et al.Nano Letters|August 2, 2016
Gate-Tunable Spatial Modulation of Localized Plasmon ResonancesAndrea Arcangeli, Francesco Rossella, Andrea Tomadin, et al.Physical Review Letters|June 4, 2008
Filling factor dependence of the fractional quantum Hall effect gapV S Khrapai, A A Shashkin, M G Trokina, et al.Physical Review Letters|October 13, 2007
Direct measurements of fractional quantum Hall effect gapsV S Khrapai, A A Shashkin, M G Trokina, et al.Nano Letters|April 3, 2019
Thermoelectric Conversion at 30 K in InAs/InP Nanowire Quantum DotsDomenic Prete, Paolo Andrea Erdman, Valeria Demontis, et al.Nanotechnology|January 11, 2017
Heterogeneous nucleation of catalyst-free InAs nanowires on siliconU P Gomes, D Ercolani, V Zannier, et al.Nano Letters|December 14, 2011
Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistorsMiriam S Vitiello, Dominique Coquillat, Leonardo Viti, et al.Pageof 154