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Changwook Kim

Showing results (21-30 of 25) with videos related to

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Nanomaterials (Basel, Switzerland)|October 27, 2022
Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub>2</sub>/p<sup>+</sup>-Si MemristorsDonguk Kim, Hee Jun Lee, Tae Jun Yang, et al.
Scientific Reports|December 27, 2024
Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistorsDonguk Kim, Dayeon Lee, Wonjung Kim, et al.
ACS Applied Materials & Interfaces|January 16, 2025
Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect TransistorsDonguk Kim, Dayeon Lee, Wonjung Kim, et al.
ACS Applied Materials & Interfaces|January 3, 2022
Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen EffectJun Tae Jang, Donguk Kim, Ju Heyuck Baeck, et al.
Scientific Reports|May 2, 2024
Floating body effect in indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT)Jingyu Park, Seungwon Go, Woojun Chae, et al.
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Showing results (21-30 of 25) with videos related to

Sort By:
Pageof 3
You have reached the last page of results.This site can display upto 25 results.
Nanomaterials (Basel, Switzerland)|October 27, 2022
Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO<sub>2</sub>/p<sup>+</sup>-Si MemristorsDonguk Kim, Hee Jun Lee, Tae Jun Yang, et al.
Scientific Reports|December 27, 2024
Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistorsDonguk Kim, Dayeon Lee, Wonjung Kim, et al.
ACS Applied Materials & Interfaces|January 16, 2025
Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect TransistorsDonguk Kim, Dayeon Lee, Wonjung Kim, et al.
ACS Applied Materials & Interfaces|January 3, 2022
Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen EffectJun Tae Jang, Donguk Kim, Ju Heyuck Baeck, et al.
Scientific Reports|May 2, 2024
Floating body effect in indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT)Jingyu Park, Seungwon Go, Woojun Chae, et al.
Pageof 3