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Cheng Siong Lim

Showing results (1-10 of 5) with videos related to

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Beilstein Journal of Nanotechnology|November 10, 2016
Metal oxide-graphene field-effect transistor: interface trap density extraction modelFaraz Najam, Kah Cheong Lau, Cheng Siong Lim, et al.
Nanoscale Research Letters|January 17, 2014
Analytical modeling of glucose biosensors based on carbon nanotubesAli H Pourasl, Mohammad Taghi Ahmadi, Meisam Rahmani, et al.
Plos One|March 3, 2022
Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible modelMu Wen Chuan, Munawar Agus Riyadi, Afiq Hamzah, et al.
Plos One|June 14, 2021
Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gatesMu Wen Chuan, Kien Liong Wong, Munawar Agus Riyadi, et al.
Plos One|August 9, 2024
Electronic properties of single vacancy defect in boron nitride nanoribbons with edge perturbationMunawar Agus Riyadi, Yuki Wong, Sheng Xuan Khoo, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
Beilstein Journal of Nanotechnology|November 10, 2016
Metal oxide-graphene field-effect transistor: interface trap density extraction modelFaraz Najam, Kah Cheong Lau, Cheng Siong Lim, et al.
Nanoscale Research Letters|January 17, 2014
Analytical modeling of glucose biosensors based on carbon nanotubesAli H Pourasl, Mohammad Taghi Ahmadi, Meisam Rahmani, et al.
Plos One|March 3, 2022
Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible modelMu Wen Chuan, Munawar Agus Riyadi, Afiq Hamzah, et al.
Plos One|June 14, 2021
Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gatesMu Wen Chuan, Kien Liong Wong, Munawar Agus Riyadi, et al.
Plos One|August 9, 2024
Electronic properties of single vacancy defect in boron nitride nanoribbons with edge perturbationMunawar Agus Riyadi, Yuki Wong, Sheng Xuan Khoo, et al.
Pageof 1