Search research articles
Contact Us
Filters
Showing results (1-10 of 27) with videos related to
Page
of 3
Sort By:
ACS Applied Materials & Interfaces
|
April 2, 2026
Geometrical Design Schemes for the 2T0C DRAM Cell Using a Vertical Stack Transistor with a Distinctive Single IGZO Active Layer
Ji-Won Kang, Chi-Sun Hwang, Sung-Min Yoon
Chemical Communications (Cambridge, England)
|
July 21, 2009
Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors
Ji-Young Oh, Jonghyurk Park, Seung-Youl Kang, et al.
Nature Communications
|
August 24, 2022
High density integration of stretchable inorganic thin film transistors with excellent performance and reliability
Himchan Oh, Ji-Young Oh, Chan Woo Park, et al.
Scientific Reports
|
January 21, 2015
Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers
Jun Yong Bak, Youngho Kang, Shinhyuk Yang, et al.
ACS Applied Materials & Interfaces
|
March 3, 2017
Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn-In-O Thin-Film Transistors
Youngin Goh, Taeho Kim, Jong-Heon Yang, et al.
ACS Applied Materials & Interfaces
|
September 15, 2012
Effect of the electrode materials on the drain-bias stress instabilities of In-Ga-Zn-O thin-film transistors
Jun Yong Bak, Sinhyuk Yang, Min Ki Ryu, et al.
Journal of Nanoscience and Nanotechnology
|
August 2, 2012
Current stress induced electrical instability in transparent zinc tin oxide thin-film transistors
Woo-Seok Cheong, Jae-Heon Shin, Sung Mook Chung, et al.
Journal of the Optical Society of America. A, Optics, Image Science, and Vision
|
December 25, 2019
Crafting a 1.5 µm pixel pitch spatial light modulator using Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase change material [Invited]
Yong-Hae Kim, Seong M Cho, Kyunghee Choi, et al.
RSC Advances
|
April 15, 2022
Solvent-assisted strongly enhanced light-emitting electrochemiluminescent devices for lighting applications
Joo Yeon Kim, Sanghoon Cheon, Dae Kyom Kim, et al.
ACS Applied Materials & Interfaces
|
July 5, 2022
Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths
Soo-Hyun Bae, Jong-Heon Yang, Yong-Hae Kim, et al.
Page
of 3
Search research articles
Search
Showing results (1-10 of 27) with videos related to
Sort By:
Page
of 3
ACS Applied Materials & Interfaces
|
April 2, 2026
Geometrical Design Schemes for the 2T0C DRAM Cell Using a Vertical Stack Transistor with a Distinctive Single IGZO Active Layer
Ji-Won Kang, Chi-Sun Hwang, Sung-Min Yoon
Chemical Communications (Cambridge, England)
|
July 21, 2009
Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors
Ji-Young Oh, Jonghyurk Park, Seung-Youl Kang, et al.
Nature Communications
|
August 24, 2022
High density integration of stretchable inorganic thin film transistors with excellent performance and reliability
Himchan Oh, Ji-Young Oh, Chan Woo Park, et al.
Scientific Reports
|
January 21, 2015
Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers
Jun Yong Bak, Youngho Kang, Shinhyuk Yang, et al.
ACS Applied Materials & Interfaces
|
March 3, 2017
Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn-In-O Thin-Film Transistors
Youngin Goh, Taeho Kim, Jong-Heon Yang, et al.
ACS Applied Materials & Interfaces
|
September 15, 2012
Effect of the electrode materials on the drain-bias stress instabilities of In-Ga-Zn-O thin-film transistors
Jun Yong Bak, Sinhyuk Yang, Min Ki Ryu, et al.
Journal of Nanoscience and Nanotechnology
|
August 2, 2012
Current stress induced electrical instability in transparent zinc tin oxide thin-film transistors
Woo-Seok Cheong, Jae-Heon Shin, Sung Mook Chung, et al.
Journal of the Optical Society of America. A, Optics, Image Science, and Vision
|
December 25, 2019
Crafting a 1.5 µm pixel pitch spatial light modulator using Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase change material [Invited]
Yong-Hae Kim, Seong M Cho, Kyunghee Choi, et al.
RSC Advances
|
April 15, 2022
Solvent-assisted strongly enhanced light-emitting electrochemiluminescent devices for lighting applications
Joo Yeon Kim, Sanghoon Cheon, Dae Kyom Kim, et al.
ACS Applied Materials & Interfaces
|
July 5, 2022
Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths
Soo-Hyun Bae, Jong-Heon Yang, Yong-Hae Kim, et al.
Page
of 3