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Chun-Hu Cheng

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Journal of Nanoscience and Nanotechnology|June 15, 2019
Forming-Free SiGeO<sub></sub>/TiO<sub></sub> Resistive Random Access Memories Featuring Large Current Distribution WindowsChun-Hu Cheng, Albert Chin, Hsiao-Hsuan Hsu
Journal of Nanoscience and Nanotechnology|September 11, 2015
TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance DensityChun-Hu Cheng, Hsiao-Hsuan Hsu, Kun-i Chou
Materials (Basel, Switzerland)|May 13, 2023
Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium Oxide DevicesRuo-Yin Liao, Hsuan-Han Chen, Ping-Yu Lin, et al.
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Showing results (1-10 of 3) with videos related to

Sort By:
Pageof 1
Journal of Nanoscience and Nanotechnology|June 15, 2019
Forming-Free SiGeO<sub></sub>/TiO<sub></sub> Resistive Random Access Memories Featuring Large Current Distribution WindowsChun-Hu Cheng, Albert Chin, Hsiao-Hsuan Hsu
Journal of Nanoscience and Nanotechnology|September 11, 2015
TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance DensityChun-Hu Cheng, Hsiao-Hsuan Hsu, Kun-i Chou
Materials (Basel, Switzerland)|May 13, 2023
Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium Oxide DevicesRuo-Yin Liao, Hsuan-Han Chen, Ping-Yu Lin, et al.
Pageof 1