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Journal of Computational Electronics|January 31, 2020
Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applicationsD Ielmini, V MiloFaraday Discussions|October 27, 2018
Computing of temporal information in spiking neural networks with ReRAM synapsesW Wang, G Pedretti, V Milo, et al.Scientific Reports|July 15, 2017
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticityG Pedretti, V Milo, S Ambrogio, et al.Scientific Reports|June 20, 2018
Publisher Correction: Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticityG Pedretti, V Milo, S Ambrogio, et al.Nanotechnology|May 17, 2011
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memoriesD Ielmini, F Nardi, C CagliAdvanced Materials (Deerfield Beach, Fla.)|August 16, 2013
Logic computation in phase change materials by threshold and memory switchingM Cassinerio, N Ciocchini, D IelminiAdvanced Materials (Deerfield Beach, Fla.)|January 5, 2013
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filamentS Balatti, S Larentis, D C Gilmer, et al.Nanotechnology|September 4, 2013
Spike-timing dependent plasticity in a transistor-selected resistive switching memoryS Ambrogio, S Balatti, F Nardi, et al.Scientific Reports|July 6, 2016
Bipolar switching in chalcogenide phase change memoryN Ciocchini, M Laudato, M Boniardi, et al.Nature Communications|March 22, 2023
A self-adaptive hardware with resistive switching synapses for experience-based neurocomputingS Bianchi, I Muñoz-Martin, E Covi, et al.Pageof 1