Search research articles
Contact Us
Filters
Showing results (1-10 of 21) with videos related to
Page
of 3
Sort By:
Optics Letters
|
June 2, 2020
40 Gbit/s waveguide photodiode using III-V on silicon heteroepitaxy
Keye Sun, Junyi Gao, Daehwan Jung, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
November 15, 2024
Engineering Photocarrier Redistributions in Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructures for Radiative Recombination Enhancements
Rafael Jumar Chu, Quang Nhat Dang Lung, Tsimafei Laryn, et al.
Optics Letters
|
July 16, 2019
III-V on silicon avalanche photodiodes by heteroepitaxy
Yuan Yuan, Daehwan Jung, Keye Sun, et al.
ACS Applied Materials & Interfaces
|
November 18, 2023
Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes
Eungbeom Yeon, Seungwan Woo, Rafael Jumar Chu, et al.
Optics Express
|
April 4, 2018
Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon
Daisuke Inoue, Daehwan Jung, Justin Norman, et al.
Optics Express
|
February 1, 2024
Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth
Rafael Jumar Chu, Tsimafei Laryn, Dae-Hwan Ahn, et al.
Nanoscale
|
January 22, 2024
Gradual degradation in InAs quantum dot lasers on Si and GaAs
Eamonn T Hughes, Chen Shang, Jennifer Selvidge, et al.
ACS Nano
|
September 17, 2015
High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures
Sung-Min Lee, Anthony Kwong, Daehwan Jung, et al.
Optics Letters
|
January 13, 2017
Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si
Alan Y Liu, Jon Peters, Xue Huang, et al.
Optics Express
|
December 31, 2020
Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform
Namgi Hong, Rafael Jumar Chu, Soo Seok Kang, et al.
Page
of 3
Search research articles
Search
Showing results (1-10 of 21) with videos related to
Sort By:
Page
of 3
Optics Letters
|
June 2, 2020
40 Gbit/s waveguide photodiode using III-V on silicon heteroepitaxy
Keye Sun, Junyi Gao, Daehwan Jung, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
November 15, 2024
Engineering Photocarrier Redistributions in Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructures for Radiative Recombination Enhancements
Rafael Jumar Chu, Quang Nhat Dang Lung, Tsimafei Laryn, et al.
Optics Letters
|
July 16, 2019
III-V on silicon avalanche photodiodes by heteroepitaxy
Yuan Yuan, Daehwan Jung, Keye Sun, et al.
ACS Applied Materials & Interfaces
|
November 18, 2023
Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes
Eungbeom Yeon, Seungwan Woo, Rafael Jumar Chu, et al.
Optics Express
|
April 4, 2018
Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon
Daisuke Inoue, Daehwan Jung, Justin Norman, et al.
Optics Express
|
February 1, 2024
Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth
Rafael Jumar Chu, Tsimafei Laryn, Dae-Hwan Ahn, et al.
Nanoscale
|
January 22, 2024
Gradual degradation in InAs quantum dot lasers on Si and GaAs
Eamonn T Hughes, Chen Shang, Jennifer Selvidge, et al.
ACS Nano
|
September 17, 2015
High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures
Sung-Min Lee, Anthony Kwong, Daehwan Jung, et al.
Optics Letters
|
January 13, 2017
Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si
Alan Y Liu, Jon Peters, Xue Huang, et al.
Optics Express
|
December 31, 2020
Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform
Namgi Hong, Rafael Jumar Chu, Soo Seok Kang, et al.
Page
of 3