Related Experiment Video
Updated: Dec 20, 2025
10:31
Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
7.8K
40 Gbit/s waveguide photodiode using III-V on silicon heteroepitaxy.
Optics Letters
|June 2, 2020
Summary
Low-dark-current waveguide photodiodes (PDs) were fabricated on silicon using InGaAs/InAlGaAs heteroepitaxy. These devices achieve high responsivity and bandwidth, enabling 40 Gbit/s data transmission.
Area of Science:
- Optoelectronics
- Semiconductor Devices
- Integrated Photonics
Background:
- Photodetectors are crucial components in optical communication systems.
- Developing high-performance photodetectors on silicon substrates is essential for cost-effective photonic integrated circuits.
- Waveguide-integrated photodetectors offer advantages in miniaturization and coupling efficiency.
Purpose of the Study:
- To demonstrate low-dark-current waveguide modified uni-traveling carrier photodiodes (PDs) on silicon.
- To investigate the performance characteristics of these novel photodetectors.
- To assess their suitability for high-speed optical communication.
Main Methods:
- Direct heteroepitaxy of InGaAs/InAlGaAs on silicon templates.
- Fabrication of waveguide-coupled photodiode structures.
- Characterization of dark current, responsivity, and bandwidth.
Main Results:
- Achieved a low dark current of 0.1 µA at -3 V bias.
- Obtained an internal responsivity of 0.78 A/W and external responsivity of 0.27 A/W.
- Demonstrated a 3 dB bandwidth of 28 GHz and successful open eye diagrams at 40 Gbit/s.
Conclusions:
- Direct heteroepitaxy enables high-performance InGaAs/InAlGaAs PDs on silicon.
- The demonstrated waveguide PDs exhibit excellent optoelectronic properties for high-speed applications.
- These results pave the way for silicon-based photonic integrated circuits for optical communications.
