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David Wei

Showing results (91-100 of 302) with videos related to

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Nanomaterials (Basel, Switzerland)|June 10, 2023
High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as DielectricsYuli He, Guang Zheng, Bao Zhu, et al.
Optics Letters|May 1, 2026
Organic-assisted band engineering enables high-performance self-powered solar-blind 4H-SiC photodetectorsMaoyin Wang, Zhijian Zhang, Zhen Wang, et al.
Scientific Reports|July 7, 2015
The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced MobilityWen Yang, Qing-Qing Sun, Yang Geng, et al.
ACS Applied Materials & Interfaces|May 9, 2017
Realizing Stable p-Type Transporting in Two-Dimensional WS<sub>2</sub> FilmsQian Cao, Ya-Wei Dai, Jing Xu, et al.
Nano Letters|May 24, 2024
Domain Switching Characteristics in Ga-Doped HfO<sub>2</sub> Ferroelectric Thin Films with Low Coercive FieldYu-Chun Li, Teng Huang, Xiao-Xi Li, et al.
Research (Washington, D.C.)|January 11, 2020
A Photoelectric-Stimulated MoS<sub>2</sub> Transistor for Neuromorphic EngineeringShuiyuan Wang, Xiang Hou, Lan Liu, et al.
Journal of the American Chemical Society|March 24, 2020
Manipulating Atomic Structures at the Au/TiO<sub>2</sub> Interface for O<sub>2</sub> ActivationJiawei Huang, Shuai He, Justin L Goodsell, et al.
Optics Express|September 26, 2015
Effects of ZnO seed layer annealing temperature on the properties of n-ZnO NWs/Al(2)O(3)/p-Si heterojunctionYu-Zhu Gu, Hong-Liang Lu, Yuan Zhang, et al.
Journal of Oncology Pharmacy Practice : Official Publication of the International Society of Oncology Pharmacy Practitioners|February 12, 2010
Incidence and predictors of cetuximab hypersensitivity reactions in a North Carolina academic medical centerNicole L Hansen, Divya V Chandiramani, Michael A Morse, et al.
Nano Letters|May 26, 2023
Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional TransistorZhe Sheng, Jianguo Dong, Wennan Hu, et al.
Pageof 31

Showing results (91-100 of 302) with videos related to

Sort By:
Pageof 31
Nanomaterials (Basel, Switzerland)|June 10, 2023
High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as DielectricsYuli He, Guang Zheng, Bao Zhu, et al.
Optics Letters|May 1, 2026
Organic-assisted band engineering enables high-performance self-powered solar-blind 4H-SiC photodetectorsMaoyin Wang, Zhijian Zhang, Zhen Wang, et al.
Scientific Reports|July 7, 2015
The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced MobilityWen Yang, Qing-Qing Sun, Yang Geng, et al.
ACS Applied Materials & Interfaces|May 9, 2017
Realizing Stable p-Type Transporting in Two-Dimensional WS<sub>2</sub> FilmsQian Cao, Ya-Wei Dai, Jing Xu, et al.
Nano Letters|May 24, 2024
Domain Switching Characteristics in Ga-Doped HfO<sub>2</sub> Ferroelectric Thin Films with Low Coercive FieldYu-Chun Li, Teng Huang, Xiao-Xi Li, et al.
Research (Washington, D.C.)|January 11, 2020
A Photoelectric-Stimulated MoS<sub>2</sub> Transistor for Neuromorphic EngineeringShuiyuan Wang, Xiang Hou, Lan Liu, et al.
Journal of the American Chemical Society|March 24, 2020
Manipulating Atomic Structures at the Au/TiO<sub>2</sub> Interface for O<sub>2</sub> ActivationJiawei Huang, Shuai He, Justin L Goodsell, et al.
Optics Express|September 26, 2015
Effects of ZnO seed layer annealing temperature on the properties of n-ZnO NWs/Al(2)O(3)/p-Si heterojunctionYu-Zhu Gu, Hong-Liang Lu, Yuan Zhang, et al.
Journal of Oncology Pharmacy Practice : Official Publication of the International Society of Oncology Pharmacy Practitioners|February 12, 2010
Incidence and predictors of cetuximab hypersensitivity reactions in a North Carolina academic medical centerNicole L Hansen, Divya V Chandiramani, Michael A Morse, et al.
Nano Letters|May 26, 2023
Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional TransistorZhe Sheng, Jianguo Dong, Wennan Hu, et al.
Pageof 31