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Dominic Waldhoer

Showing results (1-10 of 8) with videos related to

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Journal of Physics. Condensed Matter : an Institute of Physics Journal|July 15, 2026
Microscopic origins of electron trapping in amorphous silicon nitride (a-Si<sub>3</sub>N<sub>4</sub>) and its role in charge-trap flash memoryChristoph Wilhelmer, Lukas Hückmann, Jonathon Cottom, et al.
The Journal of Chemical Physics|May 15, 2023
Machine learning interatomic potential for silicon-nitride (Si3N4) by active learningDiego Milardovich, Christoph Wilhelmer, Dominic Waldhoer, et al.
Nanomaterials (Basel, Switzerland)|August 26, 2023
Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si<sub>3</sub>N<sub>4</sub>)Christoph Wilhelmer, Dominic Waldhoer, Lukas Cvitkovich, et al.
ACS Nano|March 5, 2025
Two-dimensional Bi<sub>2</sub>SeO<sub>2</sub> and Its Native Insulators for Next-Generation NanoelectronicsPedram Khakbaz, Dominic Waldhoer, Mina Bahrami, et al.
ACS Nano|July 14, 2026
Reliability and Stability Issues in Bi<sub>2</sub>O<sub>2</sub>Se/β-Bi<sub>2</sub>SeO<sub>5</sub> Field-Effect TransistorsMina Bahrami, Mohammad Rasool Davoudi, Axel Verdianu, et al.
Nature Communications|December 5, 2024
A stochastic encoder using point defects in two-dimensional materialsHarikrishnan Ravichandran, Theresia Knobloch, Shiva Subbulakshmi Radhakrishnan, et al.
ACS Nano|July 25, 2023
Observation of Rich Defect Dynamics in Monolayer MoS<sub>2</sub>Harikrishnan Ravichandran, Theresia Knobloch, Andrew Pannone, et al.
Nature Communications|November 21, 2025
A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projectionAlexander Karl, Axel Verdianu, Dominic Waldhoer, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
Journal of Physics. Condensed Matter : an Institute of Physics Journal|July 15, 2026
Microscopic origins of electron trapping in amorphous silicon nitride (a-Si<sub>3</sub>N<sub>4</sub>) and its role in charge-trap flash memoryChristoph Wilhelmer, Lukas Hückmann, Jonathon Cottom, et al.
The Journal of Chemical Physics|May 15, 2023
Machine learning interatomic potential for silicon-nitride (Si3N4) by active learningDiego Milardovich, Christoph Wilhelmer, Dominic Waldhoer, et al.
Nanomaterials (Basel, Switzerland)|August 26, 2023
Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si<sub>3</sub>N<sub>4</sub>)Christoph Wilhelmer, Dominic Waldhoer, Lukas Cvitkovich, et al.
ACS Nano|March 5, 2025
Two-dimensional Bi<sub>2</sub>SeO<sub>2</sub> and Its Native Insulators for Next-Generation NanoelectronicsPedram Khakbaz, Dominic Waldhoer, Mina Bahrami, et al.
ACS Nano|July 14, 2026
Reliability and Stability Issues in Bi<sub>2</sub>O<sub>2</sub>Se/β-Bi<sub>2</sub>SeO<sub>5</sub> Field-Effect TransistorsMina Bahrami, Mohammad Rasool Davoudi, Axel Verdianu, et al.
Nature Communications|December 5, 2024
A stochastic encoder using point defects in two-dimensional materialsHarikrishnan Ravichandran, Theresia Knobloch, Shiva Subbulakshmi Radhakrishnan, et al.
ACS Nano|July 25, 2023
Observation of Rich Defect Dynamics in Monolayer MoS<sub>2</sub>Harikrishnan Ravichandran, Theresia Knobloch, Andrew Pannone, et al.
Nature Communications|November 21, 2025
A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projectionAlexander Karl, Axel Verdianu, Dominic Waldhoer, et al.
Pageof 1