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Dongyeol Ju

Showing results (1-10 of 15) with videos related to

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Iscience|August 12, 2024
Volatile tin oxide memristor for neuromorphic computingDongyeol Ju, Sungjun Kim
Nanoscale|August 1, 2024
On-receptor computing with classical associative learning in semiconductor oxide memristorsDongyeol Ju, Jungwoo Lee, Sungjun Kim
Nanomaterials (Basel, Switzerland)|September 9, 2023
Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic SystemDongyeol Ju, Sunghun Kim, Sungjun Kim
Materials (Basel, Switzerland)|December 9, 2023
Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO<sub>2</sub> Bilayer DeviceDongyeol Ju, Minsuk Koo, Sungjun Kim
Materials (Basel, Switzerland)|January 26, 2024
Implementation of Artificial Synapse Using IGZO-Based Resistive Switching DeviceSeongmin Kim, Dongyeol Ju, Sungjun Kim
Materials (Basel, Switzerland)|September 28, 2023
Double-Forming Mechanism of TaO<sub>x</sub>-Based Resistive Memory Device and Its Synaptic ApplicationsDongyeol Ju, Sunghun Kim, Subaek Lee, et al.
Nanomaterials (Basel, Switzerland)|November 10, 2023
The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO<sub>x</sub>/W Bilayer-Structured Memory DeviceMinseo Noh, Dongyeol Ju, Seongjae Cho, et al.
The Journal of Chemical Physics|July 2, 2024
Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computingDongyeol Ju, Jungwoo Lee, Sungjun Kim, et al.
Materials (Basel, Switzerland)|September 28, 2023
Improved Uniformity of TaO<sub>x</sub>-Based Resistive Switching Memory Device by Inserting Thin SiO<sub>2</sub> Layer for Neuromorphic SystemDongyeol Ju, Sunghun Kim, Junwon Jang, et al.
Nanomaterials (Basel, Switzerland)|November 10, 2023
Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming ProcessMinkang Kim, Dongyeol Ju, Myounggon Kang, et al.
Pageof 2

Showing results (1-10 of 15) with videos related to

Sort By:
Pageof 2
Iscience|August 12, 2024
Volatile tin oxide memristor for neuromorphic computingDongyeol Ju, Sungjun Kim
Nanoscale|August 1, 2024
On-receptor computing with classical associative learning in semiconductor oxide memristorsDongyeol Ju, Jungwoo Lee, Sungjun Kim
Nanomaterials (Basel, Switzerland)|September 9, 2023
Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic SystemDongyeol Ju, Sunghun Kim, Sungjun Kim
Materials (Basel, Switzerland)|December 9, 2023
Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO<sub>2</sub> Bilayer DeviceDongyeol Ju, Minsuk Koo, Sungjun Kim
Materials (Basel, Switzerland)|January 26, 2024
Implementation of Artificial Synapse Using IGZO-Based Resistive Switching DeviceSeongmin Kim, Dongyeol Ju, Sungjun Kim
Materials (Basel, Switzerland)|September 28, 2023
Double-Forming Mechanism of TaO<sub>x</sub>-Based Resistive Memory Device and Its Synaptic ApplicationsDongyeol Ju, Sunghun Kim, Subaek Lee, et al.
Nanomaterials (Basel, Switzerland)|November 10, 2023
The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO<sub>x</sub>/W Bilayer-Structured Memory DeviceMinseo Noh, Dongyeol Ju, Seongjae Cho, et al.
The Journal of Chemical Physics|July 2, 2024
Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computingDongyeol Ju, Jungwoo Lee, Sungjun Kim, et al.
Materials (Basel, Switzerland)|September 28, 2023
Improved Uniformity of TaO<sub>x</sub>-Based Resistive Switching Memory Device by Inserting Thin SiO<sub>2</sub> Layer for Neuromorphic SystemDongyeol Ju, Sunghun Kim, Junwon Jang, et al.
Nanomaterials (Basel, Switzerland)|November 10, 2023
Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming ProcessMinkang Kim, Dongyeol Ju, Myounggon Kang, et al.
Pageof 2