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Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic

Dongyeol Ju1, Sunghun Kim1, Junwon Jang1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

Materials (Basel, Switzerland)
|September 28, 2023
PubMed

Keywords:
RRAMbilayerneuromorphic systemspike-timing-dependent plasticitysynaptic plasticity

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