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Micron (Oxford, England : 1993)|August 12, 2006
TEM-nanoindentation studies of semiconducting structuresE Le Bourhis, G Patriarche
Nanotechnology|February 16, 2016
Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned SiK Pantzas, E Le Bourhis, G Patriarche, et al.
Ultramicroscopy|November 3, 2020
Experimental quantification of atomically-resolved HAADF-STEM images using EDXK Pantzas, G Patriarche
Physical Review Letters|September 28, 2004
Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAsF Glas, G Patriarche, L Largeau, et al.
Nanotechnology|May 20, 2020
Density-controlled growth of vertical InP nanowires on Si(111) substratesA Jaffal, P Regreny, G Patriarche, et al.
Nanotechnology|November 19, 2016
Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievementM Fahed, L Desplanque, D Troadec, et al.
Nanotechnology|May 9, 2018
In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrateL Desplanque, A Bucamp, D Troadec, et al.
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