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Nanomaterials (Basel, Switzerland)|December 15, 2020
Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current OvershootHojeong Ryu, Sungjun KimNanomaterials (Basel, Switzerland)|October 21, 2020
Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN StackHojeong Ryu, Sungjun KimMicromachines|October 2, 2020
Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 LayerJunhyeok Choi, Sungjun KimNanomaterials (Basel, Switzerland)|November 3, 2020
Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaO/TiN Artificial Synaptic DeviceHojeong Ryu, Sungjun KimBiomaterials Advances|August 12, 2022
Lipid-mediated ex vivo cell surface engineering for augmented cellular functionalitiesSungjun Kim, Kyobum KimNanomaterials (Basel, Switzerland)|September 16, 2020
Short-Term Memory Dynamics of TiN/Ti/TiO2/SiO/Si Resistive Random Access MemoryHyojong Cho, Sungjun KimNanomaterials (Basel, Switzerland)|September 3, 2020
Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access MemoryHyojong Cho, Sungjun KimNanomaterials (Basel, Switzerland)|August 14, 2020
Pseudo-Interface Switching of a Two-Terminal TaO/HfO2 Synaptic Device for Neuromorphic ApplicationsHojeong Ryu, Sungjun KimOptics Express|September 15, 2023
Efficient strain-modified improved nonparabolic-band energy dispersion model that considers the effect of conduction band nonparabolicity in mid-infrared quantum cascade lasersSungjun Kim, Jungho KimNanoscale Research Letters|August 13, 2016
Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access MemorySungjun Kim, Byung-Gook ParkPageof 31