Short-Term Memory Dynamics of TiN/Ti/TiO2/SiO/Si Resistive Random Access Memory

Hyojong Cho1, Sungjun Kim1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.

Summary

This study demonstrates a novel synaptic device mimicking biological neurons for neuromorphic computing. The complementary metal-oxide-semiconductor (CMOS)-compatible resistive random access memory shows potential for efficient, brain-inspired data processing.

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