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Materials Horizons|May 2, 2025
Fully hardware-oriented physical reservoir computing using 3D vertical resistive switching memory with different bottom electrodesJihee Park, Gimun Kim, Sungjun KimNanomaterials (Basel, Switzerland)|October 23, 2020
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO ElectrodeChandreswar Mahata, Myounggon Kang, Sungjun KimNanomaterials (Basel, Switzerland)|October 14, 2022
Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen DopingDoohyung Kim, Jihyung Kim, Sungjun KimNanoscale|August 1, 2024
On-receptor computing with classical associative learning in semiconductor oxide memristorsDongyeol Ju, Jungwoo Lee, Sungjun KimNanomaterials (Basel, Switzerland)|September 9, 2023
Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic SystemDongyeol Ju, Sunghun Kim, Sungjun KimNanomaterials (Basel, Switzerland)|October 15, 2024
Quantum Dots for Resistive Switching Memory and Artificial SynapseGyeongpyo Kim, Seoyoung Park, Sungjun KimScientific Reports|August 17, 2021
Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic systemJongmin Park, Hojeong Ryu, Sungjun KimNanomaterials (Basel, Switzerland)|July 9, 2022
Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic SystemInho Oh, Juyeong Pyo, Sungjun KimMaterials (Basel, Switzerland)|December 23, 2022
Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlOx Thin LayerJuyeong Pyo, Hoesung Ha, Sungjun KimThe Journal of Chemical Physics|December 16, 2024
Ferroelectric properties of HfAlOx-based ferroelectric memristor devices for neuromorphic applications: Influence of top electrode deposition methodWoohyun Park, Yongjin Park, Sungjun KimPageof 31