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F E Hudson

Showing results (1-10 of 14) with videos related to

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Physical Review Letters|October 10, 2006
Microsecond resolution of quasiparticle tunneling in the single-Cooper-pair transistorA J Ferguson, N A Court, F E Hudson, et al.
Nature Communications|August 16, 2018
Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dotS D Liles, R Li, C H Yang, et al.
Nanotechnology|August 10, 2011
Gate-controlled charge transfer in Si:P double quantum dotsF E Hudson, A J Ferguson, C C Escott, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Single atom devices by ion implantationJessica van Donkelaar, C Yang, A D C Alves, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarkingJ T Muhonen, A Laucht, S Simmons, et al.
Nature|October 6, 2015
A two-qubit logic gate in siliconM Veldhorst, C H Yang, J C C Hwang, et al.
Nature Nanotechnology|October 13, 2014
An addressable quantum dot qubit with fault-tolerant control-fidelityM Veldhorst, J C C Hwang, C H Yang, et al.
Nature Communications|October 31, 2018
Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readoutM A Fogarty, K W Chan, B Hensen, et al.
Nature|May 16, 2019
Fidelity benchmarks for two-qubit gates in siliconW Huang, C H Yang, K W Chan, et al.
Nature Communications|July 6, 2021
Coherent spin qubit transport in siliconJ Yoneda, W Huang, M Feng, et al.
Pageof 2

Showing results (1-10 of 14) with videos related to

Sort By:
Pageof 2
Physical Review Letters|October 10, 2006
Microsecond resolution of quasiparticle tunneling in the single-Cooper-pair transistorA J Ferguson, N A Court, F E Hudson, et al.
Nature Communications|August 16, 2018
Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dotS D Liles, R Li, C H Yang, et al.
Nanotechnology|August 10, 2011
Gate-controlled charge transfer in Si:P double quantum dotsF E Hudson, A J Ferguson, C C Escott, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Single atom devices by ion implantationJessica van Donkelaar, C Yang, A D C Alves, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarkingJ T Muhonen, A Laucht, S Simmons, et al.
Nature|October 6, 2015
A two-qubit logic gate in siliconM Veldhorst, C H Yang, J C C Hwang, et al.
Nature Nanotechnology|October 13, 2014
An addressable quantum dot qubit with fault-tolerant control-fidelityM Veldhorst, J C C Hwang, C H Yang, et al.
Nature Communications|October 31, 2018
Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readoutM A Fogarty, K W Chan, B Hensen, et al.
Nature|May 16, 2019
Fidelity benchmarks for two-qubit gates in siliconW Huang, C H Yang, K W Chan, et al.
Nature Communications|July 6, 2021
Coherent spin qubit transport in siliconJ Yoneda, W Huang, M Feng, et al.
Pageof 2