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Feng-Shou Yang

Showing results (1-10 of 13) with videos related to

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ACS Applied Materials & Interfaces|September 19, 2019
High-Mobility InSe Transistors: The Nature of Charge TransportTsung-Han Tsai, Feng-Shou Yang, Po-Hsun Ho, et al.
Nature Communications|October 2, 2025
Bioinspired high-order in-sensor spatiotemporal enhancement in van der Waals optoelectronic neuromorphic electronicsMengjiao Li, Hongling Chu, Caifang Gao, et al.
Nature Communications|February 18, 2022
Filling the gap between topological insulator nanomaterials and triboelectric nanogeneratorsMengjiao Li, Hong-Wei Lu, Shu-Wei Wang, et al.
Nature Communications|March 18, 2022
Author Correction: Filling the gap between topological insulator nanomaterials and triboelectric nanogeneratorsMengjiao Li, Hong-Wei Lu, Shu-Wei Wang, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 5, 2026
Intelligent Tactile Perception Revolution: Innovations in Flexible FET-Based Tactile Sensors for Next-Gen Human-Machine InterfacesQiyi Nie, Fei Wang, Feng-Shou Yang, et al.
ACS Applied Materials & Interfaces|November 21, 2019
Oxygen-Sensitive Layered MoTe<sub>2</sub> Channels for Environmental DetectionShih-Hsien Yang, Che-Yi Lin, Yuan-Ming Chang, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 28, 2018
High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge DopingMengjiao Li, Che-Yi Lin, Shih-Hsien Yang, et al.
ACS Applied Materials & Interfaces|September 1, 2020
Facile and Reversible Carrier-Type Manipulation of Layered MoTe<sub>2</sub> Toward Long-Term Stable ElectronicsMengjiao Li, Che-Yi Lin, Yuan-Ming Chang, et al.
Nature Communications|June 14, 2020
Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic featuresFeng-Shou Yang, Mengjiao Li, Mu-Pai Lee, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|July 13, 2022
Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals HeterostructuresCiao-Fen Chen, Shih-Hsien Yang, Che-Yi Lin, et al.
Pageof 2

Showing results (1-10 of 13) with videos related to

Sort By:
Pageof 2
ACS Applied Materials & Interfaces|September 19, 2019
High-Mobility InSe Transistors: The Nature of Charge TransportTsung-Han Tsai, Feng-Shou Yang, Po-Hsun Ho, et al.
Nature Communications|October 2, 2025
Bioinspired high-order in-sensor spatiotemporal enhancement in van der Waals optoelectronic neuromorphic electronicsMengjiao Li, Hongling Chu, Caifang Gao, et al.
Nature Communications|February 18, 2022
Filling the gap between topological insulator nanomaterials and triboelectric nanogeneratorsMengjiao Li, Hong-Wei Lu, Shu-Wei Wang, et al.
Nature Communications|March 18, 2022
Author Correction: Filling the gap between topological insulator nanomaterials and triboelectric nanogeneratorsMengjiao Li, Hong-Wei Lu, Shu-Wei Wang, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 5, 2026
Intelligent Tactile Perception Revolution: Innovations in Flexible FET-Based Tactile Sensors for Next-Gen Human-Machine InterfacesQiyi Nie, Fei Wang, Feng-Shou Yang, et al.
ACS Applied Materials & Interfaces|November 21, 2019
Oxygen-Sensitive Layered MoTe<sub>2</sub> Channels for Environmental DetectionShih-Hsien Yang, Che-Yi Lin, Yuan-Ming Chang, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 28, 2018
High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge DopingMengjiao Li, Che-Yi Lin, Shih-Hsien Yang, et al.
ACS Applied Materials & Interfaces|September 1, 2020
Facile and Reversible Carrier-Type Manipulation of Layered MoTe<sub>2</sub> Toward Long-Term Stable ElectronicsMengjiao Li, Che-Yi Lin, Yuan-Ming Chang, et al.
Nature Communications|June 14, 2020
Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic featuresFeng-Shou Yang, Mengjiao Li, Mu-Pai Lee, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|July 13, 2022
Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals HeterostructuresCiao-Fen Chen, Shih-Hsien Yang, Che-Yi Lin, et al.
Pageof 2