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G Patriarche

Showing results (1-10 of 40) with videos related to

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Ultramicroscopy|November 3, 2020
Experimental quantification of atomically-resolved HAADF-STEM images using EDXK Pantzas, G Patriarche
Micron (Oxford, England : 1993)|August 12, 2006
TEM-nanoindentation studies of semiconducting structuresE Le Bourhis, G Patriarche
Physical Review Letters|September 28, 2004
Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAsF Glas, G Patriarche, L Largeau, et al.
Nanotechnology|May 20, 2020
Density-controlled growth of vertical InP nanowires on Si(111) substratesA Jaffal, P Regreny, G Patriarche, et al.
Nanotechnology|November 19, 2016
Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievementM Fahed, L Desplanque, D Troadec, et al.
Nanotechnology|May 9, 2018
In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrateL Desplanque, A Bucamp, D Troadec, et al.
Nano Letters|March 9, 2010
Crystal phase quantum dotsN Akopian, G Patriarche, L Liu, et al.
Nanotechnology|July 6, 2011
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxyM Tchernycheva, J C Harmand, G Patriarche, et al.
Nanoscale|April 22, 2015
Nanoscale elemental quantification in heterostructured SiGe nanowiresW Hourani, P Periwal, F Bassani, et al.
Scientific Reports|May 19, 2015
Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychographyV Chamard, M Allain, P Godard, et al.
Pageof 4

Showing results (1-10 of 40) with videos related to

Sort By:
Pageof 4
Ultramicroscopy|November 3, 2020
Experimental quantification of atomically-resolved HAADF-STEM images using EDXK Pantzas, G Patriarche
Micron (Oxford, England : 1993)|August 12, 2006
TEM-nanoindentation studies of semiconducting structuresE Le Bourhis, G Patriarche
Physical Review Letters|September 28, 2004
Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAsF Glas, G Patriarche, L Largeau, et al.
Nanotechnology|May 20, 2020
Density-controlled growth of vertical InP nanowires on Si(111) substratesA Jaffal, P Regreny, G Patriarche, et al.
Nanotechnology|November 19, 2016
Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievementM Fahed, L Desplanque, D Troadec, et al.
Nanotechnology|May 9, 2018
In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrateL Desplanque, A Bucamp, D Troadec, et al.
Nano Letters|March 9, 2010
Crystal phase quantum dotsN Akopian, G Patriarche, L Liu, et al.
Nanotechnology|July 6, 2011
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxyM Tchernycheva, J C Harmand, G Patriarche, et al.
Nanoscale|April 22, 2015
Nanoscale elemental quantification in heterostructured SiGe nanowiresW Hourani, P Periwal, F Bassani, et al.
Scientific Reports|May 19, 2015
Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychographyV Chamard, M Allain, P Godard, et al.
Pageof 4