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G Patriarche

Showing results (21-30 of 40) with videos related to

Pageof 4
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Optics Express|May 26, 2009
A semiconductor laser device for the generation of surface-plasmons upon electrical injectionA Bousseksou, R Colombelli, A Babuty, et al.
Nanotechnology|December 22, 2021
In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxyA Bucamp, C Coinon, S Lepilliet, et al.
Nanotechnology|October 24, 2012
Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopyK Pantzas, G Patriarche, D Troadec, et al.
Nanotechnology|December 25, 2012
Excitonic properties of wurtzite InP nanowires grown on silicon substrateM H Hadj Alouane, N Chauvin, H Khmissi, et al.
Nanotechnology|October 24, 2017
In situ passivation of GaAsP nanowiresC Himwas, S Collin, P Rale, et al.
Nanotechnology|April 10, 2019
Correlated optical and structural analyses of individual GaAsP/GaP core-shell nanowiresC Himwas, S Collin, H-L Chen, et al.
Nanotechnology|September 14, 2011
Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrateM H Hadj Alouane, R Anufriev, N Chauvin, et al.
Ultramicroscopy|December 3, 2008
Exploration of the ultimate patterning potential achievable with focused ion beamsJ Gierak, E Bourhis, G Faini, et al.
Optics Express|December 16, 2022
Quantum cascade lasers monolithically integrated on germaniumK Kinjalk, A Gilbert, A Remis, et al.
Nanotechnology|August 11, 2011
Zinc blende GaAsSb nanowires grown by molecular beam epitaxyD L Dheeraj, G Patriarche, L Largeau, et al.
Pageof 4

Showing results (21-30 of 40) with videos related to

Sort By:
Pageof 4
Optics Express|May 26, 2009
A semiconductor laser device for the generation of surface-plasmons upon electrical injectionA Bousseksou, R Colombelli, A Babuty, et al.
Nanotechnology|December 22, 2021
In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxyA Bucamp, C Coinon, S Lepilliet, et al.
Nanotechnology|October 24, 2012
Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopyK Pantzas, G Patriarche, D Troadec, et al.
Nanotechnology|December 25, 2012
Excitonic properties of wurtzite InP nanowires grown on silicon substrateM H Hadj Alouane, N Chauvin, H Khmissi, et al.
Nanotechnology|October 24, 2017
In situ passivation of GaAsP nanowiresC Himwas, S Collin, P Rale, et al.
Nanotechnology|April 10, 2019
Correlated optical and structural analyses of individual GaAsP/GaP core-shell nanowiresC Himwas, S Collin, H-L Chen, et al.
Nanotechnology|September 14, 2011
Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrateM H Hadj Alouane, R Anufriev, N Chauvin, et al.
Ultramicroscopy|December 3, 2008
Exploration of the ultimate patterning potential achievable with focused ion beamsJ Gierak, E Bourhis, G Faini, et al.
Optics Express|December 16, 2022
Quantum cascade lasers monolithically integrated on germaniumK Kinjalk, A Gilbert, A Remis, et al.
Nanotechnology|August 11, 2011
Zinc blende GaAsSb nanowires grown by molecular beam epitaxyD L Dheeraj, G Patriarche, L Largeau, et al.
Pageof 4