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Gianluca Fiori

Showing results (1-10 of 34) with videos related to

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Scientific Reports|October 21, 2014
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devicesDemetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone
Nanoscale Horizons|December 8, 2021
An ultrafast photodetector driven by interlayer exciton dissociation in a van der Waals heterostructureEdoardo Lopriore, Enrique G Marin, Gianluca Fiori
Scientific Reports|September 30, 2015
Vertical transport in graphene-hexagonal boron nitride heterostructure devicesSamantha Bruzzone, Demetrio Logoteta, Gianluca Fiori, et al.
ACS Nano|March 1, 2012
Lateral graphene-hBCN heterostructures as a platform for fully two-dimensional transistorsGianluca Fiori, Alessandro Betti, Samantha Bruzzone, et al.
Nature Nanotechnology|May 24, 2018
Publisher Correction: Quantum engineering of transistors based on 2D materials heterostructuresGiuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo, et al.
Nature Nanotechnology|March 8, 2018
Quantum engineering of transistors based on 2D materials heterostructuresGiuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo, et al.
ACS Nano|January 15, 2020
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering SourceEnrique G Marin, Damiano Marian, Marta Perucchini, et al.
Scientific Reports|September 17, 2021
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe<sub>2</sub> via Ab initio modelling of interfacesGaetano Calogero, Damiano Marian, Enrique G Marin, et al.
Journal of Computational Electronics|October 16, 2023
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suiteDamiano Marian, Enrique G Marin, Marta Perucchini, et al.
Scientific Reports|September 16, 2017
On current transients in MoS<sub>2</sub> Field Effect TransistorsMassimo Macucci, Gerry Tambellini, Dmitry Ovchinnikov, et al.
Pageof 4

Showing results (1-10 of 34) with videos related to

Sort By:
Pageof 4
Scientific Reports|October 21, 2014
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devicesDemetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone
Nanoscale Horizons|December 8, 2021
An ultrafast photodetector driven by interlayer exciton dissociation in a van der Waals heterostructureEdoardo Lopriore, Enrique G Marin, Gianluca Fiori
Scientific Reports|September 30, 2015
Vertical transport in graphene-hexagonal boron nitride heterostructure devicesSamantha Bruzzone, Demetrio Logoteta, Gianluca Fiori, et al.
ACS Nano|March 1, 2012
Lateral graphene-hBCN heterostructures as a platform for fully two-dimensional transistorsGianluca Fiori, Alessandro Betti, Samantha Bruzzone, et al.
Nature Nanotechnology|May 24, 2018
Publisher Correction: Quantum engineering of transistors based on 2D materials heterostructuresGiuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo, et al.
Nature Nanotechnology|March 8, 2018
Quantum engineering of transistors based on 2D materials heterostructuresGiuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo, et al.
ACS Nano|January 15, 2020
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering SourceEnrique G Marin, Damiano Marian, Marta Perucchini, et al.
Scientific Reports|September 17, 2021
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe<sub>2</sub> via Ab initio modelling of interfacesGaetano Calogero, Damiano Marian, Enrique G Marin, et al.
Journal of Computational Electronics|October 16, 2023
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suiteDamiano Marian, Enrique G Marin, Marta Perucchini, et al.
Scientific Reports|September 16, 2017
On current transients in MoS<sub>2</sub> Field Effect TransistorsMassimo Macucci, Gerry Tambellini, Dmitry Ovchinnikov, et al.
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