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Nanotechnology|July 3, 2015
Raman shift and electrical properties of MoS2 bilayer on boron nitride substrateLijun Li, Inyeal Lee, Dongsuk Lim, et al.
Nano Letters|September 2, 2021
Signature of Spin-Resolved Quantum Point Contact in p-Type Trilayer WSe2 van der Waals HeterostructureKohei Sakanashi, Peter Krüger, Kenji Watanabe, et al.
Nanotechnology|April 12, 2021
High mobility field-effect transistors based on MoS2crystals grown by the flux methodVilas Patil, Jihyun Kim, Khushabu Agrawal, et al.
Nano Letters|January 7, 2012
Large-scale synthesis of high-quality hexagonal boron nitride nanosheets for large-area graphene electronicsKang Hyuck Lee, Hyeon-Jin Shin, Jinyeong Lee, et al.
ACS Applied Materials & Interfaces|June 26, 2018
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals HeterostructureMuhammad Atif Khan, Servin Rathi, Changhee Lee, et al.
ACS Applied Materials & Interfaces|July 18, 2017
Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 DeviceMuhammad Atif Khan, Servin Rathi, Jinwoo Park, et al.
Nanotechnology|July 5, 2017
Molybdenum disulfide nanoparticles decorated reduced graphene oxide: highly sensitive and selective hydrogen sensorA Venkatesan, Servin Rathi, In-Yeal Lee, et al.
Nanotechnology|April 22, 2016
High performance MoS2-based field-effect transistor enabled by hydrazine dopingDongsuk Lim, E S Kannan, Inyeal Lee, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 3, 2022
Enhanced Performance of WS2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling ContactsNhat Anh Nguyen Phan, Hamin Noh, Jihoon Kim, et al.
Nanotechnology|May 23, 2018
Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substratesChanghee Lee, Servin Rathi, Muhammad Atif Khan, et al.
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