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Gun Hwan Kim

Showing results (11-20 of 22) with videos related to

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Nanotechnology|August 27, 2010
A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memoryGun Hwan Kim, Kyung Min Kim, Jun Yeong Seok, et al.
Nanotechnology|July 9, 2010
Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structuresKyung Min Kim, Gun Hwan Kim, Seul Ji Song, et al.
Nanotechnology|March 20, 2013
Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/PtKyung Jean Yoon, Seul Ji Song, Jun Yeong Seok, et al.
Nature Communications|January 3, 2024
Purely self-rectifying memristor-based passive crossbar array for artificial neural network acceleratorsKanghyeok Jeon, Jin Joo Ryu, Seongil Im, et al.
Nanotechnology|May 17, 2011
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structureKyung Min Kim, Byung Joon Choi, Min Hwan Lee, et al.
Nanotechnology|April 21, 2012
Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO₂/Pt cellKyung Jean Yoon, Min Hwan Lee, Gun Hwan Kim, et al.
ACS Applied Materials & Interfaces|September 25, 2012
Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memoryGun Hwan Kim, Jong Ho Lee, Woojin Jeon, et al.
ACS Nano|August 5, 2024
Direct Growth of Bi<sub>2</sub>SeO<sub>5</sub> Thin Films for High-k Dielectrics via Atomic Layer DepositionHyeonbin Park, Jae Hun Hwang, Seung Hoon Oh, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 7, 2013
Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodotsJung Ho Yoon, Jeong Hwan Han, Ji Sim Jung, et al.
Nature Nanotechnology|January 19, 2010
Atomic structure of conducting nanofilaments in TiO2 resistive switching memoryDeok-Hwang Kwon, Kyung Min Kim, Jae Hyuck Jang, et al.
Pageof 3

Showing results (11-20 of 22) with videos related to

Sort By:
Pageof 3
Nanotechnology|August 27, 2010
A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memoryGun Hwan Kim, Kyung Min Kim, Jun Yeong Seok, et al.
Nanotechnology|July 9, 2010
Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structuresKyung Min Kim, Gun Hwan Kim, Seul Ji Song, et al.
Nanotechnology|March 20, 2013
Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/PtKyung Jean Yoon, Seul Ji Song, Jun Yeong Seok, et al.
Nature Communications|January 3, 2024
Purely self-rectifying memristor-based passive crossbar array for artificial neural network acceleratorsKanghyeok Jeon, Jin Joo Ryu, Seongil Im, et al.
Nanotechnology|May 17, 2011
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structureKyung Min Kim, Byung Joon Choi, Min Hwan Lee, et al.
Nanotechnology|April 21, 2012
Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO₂/Pt cellKyung Jean Yoon, Min Hwan Lee, Gun Hwan Kim, et al.
ACS Applied Materials & Interfaces|September 25, 2012
Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memoryGun Hwan Kim, Jong Ho Lee, Woojin Jeon, et al.
ACS Nano|August 5, 2024
Direct Growth of Bi<sub>2</sub>SeO<sub>5</sub> Thin Films for High-k Dielectrics via Atomic Layer DepositionHyeonbin Park, Jae Hun Hwang, Seung Hoon Oh, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 7, 2013
Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodotsJung Ho Yoon, Jeong Hwan Han, Ji Sim Jung, et al.
Nature Nanotechnology|January 19, 2010
Atomic structure of conducting nanofilaments in TiO2 resistive switching memoryDeok-Hwang Kwon, Kyung Min Kim, Jae Hyuck Jang, et al.
Pageof 3