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Gwang Hyuk Shin

Showing results (1-10 of 7) with videos related to

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Nanoscale|May 30, 2018
Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materialsHamin Park, Gwang Hyuk Shin, Khang June Lee, et al.
Nano Letters|June 27, 2020
Ultrasensitive Phototransistor Based on WSe<sub>2</sub>-MoS<sub>2</sub> van der Waals HeterojunctionGwang Hyuk Shin, Cheolmin Park, Khang June Lee, et al.
ACS Applied Materials & Interfaces|October 26, 2018
Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS<sub>2</sub> Three-Dimensional-Two-Dimensional HeterostructureGwang Hyuk Shin, Bondae Koo, Hamin Park, et al.
ACS Applied Materials & Interfaces|August 28, 2020
Photoconductivity Switching in MoTe<sub>2</sub>/Graphene Heterostructure by Trap-Assisted PhotogatingHo Jin Kim, Khang June Lee, Junghoon Park, et al.
ACS Applied Materials & Interfaces|January 24, 2019
Si-MoS<sub>2</sub> Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent PowerGwang Hyuk Shin, Junghoon Park, Khang June Lee, et al.
ACS Omega|August 29, 2019
Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen ReductionGyeong Sook Bang, Gi Woong Shim, Gwang Hyuk Shin, et al.
ACS Applied Materials & Interfaces|January 4, 2020
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS<sub>2</sub> van der Waals HeterostructureGwang Hyuk Shin, Geon-Beom Lee, Eun-Su An, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Nanoscale|May 30, 2018
Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materialsHamin Park, Gwang Hyuk Shin, Khang June Lee, et al.
Nano Letters|June 27, 2020
Ultrasensitive Phototransistor Based on WSe<sub>2</sub>-MoS<sub>2</sub> van der Waals HeterojunctionGwang Hyuk Shin, Cheolmin Park, Khang June Lee, et al.
ACS Applied Materials & Interfaces|October 26, 2018
Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS<sub>2</sub> Three-Dimensional-Two-Dimensional HeterostructureGwang Hyuk Shin, Bondae Koo, Hamin Park, et al.
ACS Applied Materials & Interfaces|August 28, 2020
Photoconductivity Switching in MoTe<sub>2</sub>/Graphene Heterostructure by Trap-Assisted PhotogatingHo Jin Kim, Khang June Lee, Junghoon Park, et al.
ACS Applied Materials & Interfaces|January 24, 2019
Si-MoS<sub>2</sub> Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent PowerGwang Hyuk Shin, Junghoon Park, Khang June Lee, et al.
ACS Omega|August 29, 2019
Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen ReductionGyeong Sook Bang, Gi Woong Shim, Gwang Hyuk Shin, et al.
ACS Applied Materials & Interfaces|January 4, 2020
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS<sub>2</sub> van der Waals HeterostructureGwang Hyuk Shin, Geon-Beom Lee, Eun-Su An, et al.
Pageof 1