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ACS Applied Materials & Interfaces|September 1, 2023
Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory DevicesIl-Kwon Oh, Asir Intisar Khan, Shengjun Qin, et al.
Nanotechnology|July 1, 2017
In situ visualization and detection of surface potential variation of mono and multilayer MoS2 under different humidities using Kelvin probe force microscopyYulin Feng, Kailiang Zhang, Hui Li, et al.
Nano Letters|September 19, 2019
Gate Quantum Capacitance Effects in Nanoscale TransistorsSujay B Desai, Hossain M Fahad, Theodor Lundberg, et al.
ACS Nano|August 2, 2012
Selective synthesis and device applications of semiconducting single-walled carbon nanotubes using isopropyl alcohol as feedstockYuchi Che, Chuan Wang, Jia Liu, et al.
Nano Letters|January 25, 2019
Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact LengthGregory Pitner, Gage Hills, Juan Pablo Llinas, et al.
Nanoscale|April 29, 2014
Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operationsL Zhao, H-Y Chen, S-C Wu, et al.
ACS Nano|March 23, 2016
Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial DistributionRebecca Sejung Park, Max Marcel Shulaker, Gage Hills, et al.
Nano Letters|January 3, 2019
Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 TransistorsElyse Barré, Jean Anne C Incorvia, Suk Hyun Kim, et al.
Nanotechnology|October 24, 2013
Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memoryHong-Yu Chen, Shimeng Yu, Bin Gao, et al.
Nature Nanotechnology|April 20, 2021
Electrical tuning of phase-change antennas and metasurfacesYifei Wang, Patrick Landreman, David Schoen, et al.
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