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ACS Applied Materials & Interfaces|June 28, 2018
Accumulative Polarization Reversal in Nanoscale Ferroelectric TransistorsHalid Mulaosmanovic, Thomas Mikolajick, Stefan Slesazeck
Nanoscale|November 16, 2018
Mimicking biological neurons with a nanoscale ferroelectric transistorHalid Mulaosmanovic, Elisabetta Chicca, Martin Bertele, et al.
Nanoscale|September 22, 2021
Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free readHalid Mulaosmanovic, Dominik Kleimaier, Stefan Dünkel, et al.
Nanotechnology|July 28, 2021
Ferroelectric field-effect transistors based on HfO2: a reviewHalid Mulaosmanovic, Evelyn T Breyer, Stefan Dünkel, et al.
Nano Letters|February 10, 2023
Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect TransistorMor Mordechai Dahan, Halid Mulaosmanovic, Or Levit, et al.
ACS Applied Materials & Interfaces|September 17, 2020
Frequency Mixing with HfO2-Based Ferroelectric TransistorsHalid Mulaosmanovic, Stefan Dünkel, Martin Trentzsch, et al.
Nature Communications|November 17, 2022
Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistorMaik Simon, Halid Mulaosmanovic, Violetta Sessi, et al.
ACS Applied Materials & Interfaces|January 11, 2017
Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect TransistorsHalid Mulaosmanovic, Johannes Ocker, Stefan Müller, et al.
ACS Applied Materials & Interfaces|November 14, 2023
Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FETZijian Zhao, Shan Deng, Swetaki Chatterjee, et al.
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