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Small (Weinheim an Der Bergstrasse, Germany)
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April 19, 2017
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials
Yu Li, Shibing Long, Qi Liu, et al.
Nanoscale
|
September 20, 2017
Electronic imitation of behavioral and psychological synaptic activities using TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>-based memristor devices
Writam Banerjee, Qi Liu, Hangbing Lv, et al.
ACS Omega
|
August 29, 2019
Variability Improvement of TiO <sub></sub> /Al<sub>2</sub>O<sub>3</sub> Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al<sub>2</sub>O<sub>3</sub> Dielectric Material
Writam Banerjee, Xiaoxin Xu, Hangbing Lv, et al.
Nanoscale
|
November 28, 2017
Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO<sub>2</sub>/Pt RRAM
Writam Banerjee, Wu Fa Cai, Xiaolong Zhao, et al.
Nanotechnology
|
October 30, 2010
Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices
Brian Butcher, Xiaoli He, Mengbing Huang, et al.
Nanoscale Research Letters
|
February 24, 2017
Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta<sub>2</sub>O<sub>5</sub>/HfO<sub>2-x</sub> /Hf Stack
Haili Ma, Jie Feng, Hangbing Lv, et al.
Nanoscale
|
December 11, 2014
High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory
Writam Banerjee, Nianduan Lu, Ling Li, et al.
ACS Nano
|
September 22, 2010
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode
Qi Liu, Shibing Long, Hangbing Lv, et al.
Micromachines
|
April 30, 2021
A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory
Qiao Wang, Donglin Zhang, Yulin Zhao, et al.
Nanoscale Research Letters
|
July 9, 2016
Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device
Meiyun Zhang, Shibing Long, Yang Li, et al.
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Search research articles
Search
Showing results (1-10 of 36) with videos related to
Sort By:
Page
of 4
Small (Weinheim an Der Bergstrasse, Germany)
|
April 19, 2017
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials
Yu Li, Shibing Long, Qi Liu, et al.
Nanoscale
|
September 20, 2017
Electronic imitation of behavioral and psychological synaptic activities using TiO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>-based memristor devices
Writam Banerjee, Qi Liu, Hangbing Lv, et al.
ACS Omega
|
August 29, 2019
Variability Improvement of TiO <sub></sub> /Al<sub>2</sub>O<sub>3</sub> Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al<sub>2</sub>O<sub>3</sub> Dielectric Material
Writam Banerjee, Xiaoxin Xu, Hangbing Lv, et al.
Nanoscale
|
November 28, 2017
Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO<sub>2</sub>/Pt RRAM
Writam Banerjee, Wu Fa Cai, Xiaolong Zhao, et al.
Nanotechnology
|
October 30, 2010
Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices
Brian Butcher, Xiaoli He, Mengbing Huang, et al.
Nanoscale Research Letters
|
February 24, 2017
Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta<sub>2</sub>O<sub>5</sub>/HfO<sub>2-x</sub> /Hf Stack
Haili Ma, Jie Feng, Hangbing Lv, et al.
Nanoscale
|
December 11, 2014
High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory
Writam Banerjee, Nianduan Lu, Ling Li, et al.
ACS Nano
|
September 22, 2010
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode
Qi Liu, Shibing Long, Hangbing Lv, et al.
Micromachines
|
April 30, 2021
A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory
Qiao Wang, Donglin Zhang, Yulin Zhao, et al.
Nanoscale Research Letters
|
July 9, 2016
Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device
Meiyun Zhang, Shibing Long, Yang Li, et al.
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of 4