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Materials (Basel, Switzerland)|December 23, 2023
Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen VacanciesChandreswar Mahata, Hyojin So, Soomin Kim, et al.Journal of Nanoscience and Nanotechnology|March 5, 2020
Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect TransistorYongjin Jeong, In Man Kang, Seongjae Cho, et al.The Journal of Chemical Physics|November 14, 2023
Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasmaChandreswar Mahata, Hyojin So, Seyeong Yang, et al.ACS Omega|December 8, 2025
A Fully Si-Compatible Ni/Si3N4/Al2O3/p + Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory ApplicationsYeji Lee, Soomin Kim, Seongmin Kim, et al.Micromachines|February 28, 2020
Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAMHyeonjeong Kim, Songyi Yoo, In-Man Kang, et al.Scientific Reports|March 10, 2022
Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computingSrikrishna Sagar, Kannan Udaya Mohanan, Seongjae Cho, et al.Micromachines|April 23, 2022
Optimization of Feedback FET with Asymmetric Source Drain Doping ProfileInyoung Lee, Hyojin Park, Quan The Nguyen, et al.Journal of Nanoscience and Nanotechnology|November 26, 2013
Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctionsSung Yun Woo, Young Jun Yoon, Seongjae Cho, et al.ACS Omega|January 20, 2025
Enhancement of Thermal, Mechanical, and Oxidative Properties of Polypropylene Composites with Exfoliated Hexagonal Boron Nitride NanosheetsAmit Kumar Sonker, Man Hieu Tran, Nathan Park, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETsJae Hwa Seo, Young Jun Yoon, Seongjae Cho, et al.Pageof 5