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Henry H Radamson

Showing results (21-30 of 38) with videos related to

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Nanoscale Research Letters|February 24, 2017
Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS TransistorsGuilei Wang, Jun Luo, Changliang Qin, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
Investigation on Ge<sub>0.8</sub>Si<sub>0.2</sub>-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around NanodeviceLu Xie, Huilong Zhu, Yongkui Zhang, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
Strain Modulation of Selectively and/or Globally Grown Ge LayersYong Du, Guilei Wang, Yuanhao Miao, et al.
Nanomaterials (Basel, Switzerland)|September 3, 2020
Strained Si<sub>0.2</sub>Ge<sub>0.8</sub>/Ge multilayer Stacks Epitaxially Grown on a Low-/high-Temperature Ge Buffer Layer and Selective Wet-Etching of GermaniumLu Xie, Huilong Zhu, Yongkui Zhang, et al.
Nanomaterials (Basel, Switzerland)|March 26, 2022
Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic ApplicationsZhenzhen Kong, Guilei Wang, Renrong Liang, et al.
Micromachines|May 5, 2019
Miniaturization of CMOSHenry H Radamson, Xiaobin He, Qingzhu Zhang, et al.
Micromachines|October 27, 2022
Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge LaserYong Du, Wenqi Wei, Buqing Xu, et al.
ACS Applied Materials & Interfaces|September 24, 2020
Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric AcidsChen Li, Huilong Zhu, Yongkui Zhang, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
The Effect of Doping on the Digital Etching of Silicon-Selective Silicon-Germanium Using Nitric AcidsYangyang Li, Huilong Zhu, Zhenzhen Kong, et al.
Nano Letters|May 26, 2021
First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal GatesChen Li, Huilong Zhu, Yongkui Zhang, et al.
Pageof 4

Showing results (21-30 of 38) with videos related to

Sort By:
Pageof 4
Nanoscale Research Letters|February 24, 2017
Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS TransistorsGuilei Wang, Jun Luo, Changliang Qin, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
Investigation on Ge<sub>0.8</sub>Si<sub>0.2</sub>-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around NanodeviceLu Xie, Huilong Zhu, Yongkui Zhang, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
Strain Modulation of Selectively and/or Globally Grown Ge LayersYong Du, Guilei Wang, Yuanhao Miao, et al.
Nanomaterials (Basel, Switzerland)|September 3, 2020
Strained Si<sub>0.2</sub>Ge<sub>0.8</sub>/Ge multilayer Stacks Epitaxially Grown on a Low-/high-Temperature Ge Buffer Layer and Selective Wet-Etching of GermaniumLu Xie, Huilong Zhu, Yongkui Zhang, et al.
Nanomaterials (Basel, Switzerland)|March 26, 2022
Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic ApplicationsZhenzhen Kong, Guilei Wang, Renrong Liang, et al.
Micromachines|May 5, 2019
Miniaturization of CMOSHenry H Radamson, Xiaobin He, Qingzhu Zhang, et al.
Micromachines|October 27, 2022
Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge LaserYong Du, Wenqi Wei, Buqing Xu, et al.
ACS Applied Materials & Interfaces|September 24, 2020
Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric AcidsChen Li, Huilong Zhu, Yongkui Zhang, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
The Effect of Doping on the Digital Etching of Silicon-Selective Silicon-Germanium Using Nitric AcidsYangyang Li, Huilong Zhu, Zhenzhen Kong, et al.
Nano Letters|May 26, 2021
First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal GatesChen Li, Huilong Zhu, Yongkui Zhang, et al.
Pageof 4