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Henry H Radamson

Showing results (31-40 of 38) with videos related to

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Nanomaterials (Basel, Switzerland)|April 3, 2021
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets DevicesQingzhu Zhang, Jie Gu, Renren Xu, et al.
ACS Applied Materials & Interfaces|November 21, 2023
Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process ConditionsZhenzhen Kong, Yanpeng Song, Hailing Wang, et al.
Nanomaterials (Basel, Switzerland)|August 14, 2020
State of the Art and Future Perspectives in Advanced CMOS TechnologyHenry H Radamson, Huilong Zhu, Zhenhua Wu, et al.
ACS Applied Materials & Interfaces|May 11, 2023
Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two MillionZhenzhen Kong, Zonghu Li, Gang Cao, et al.
ACS Nano|October 12, 2023
Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High PerformanceLu Xie, Huilong Zhu, Yongkui Zhang, et al.
Materials (Basel, Switzerland)|February 13, 2020
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nmJunjie Li, Yongliang Li, Na Zhou, et al.
Nanomaterials (Basel, Switzerland)|April 25, 2020
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-TransistorsJunjie Li, Yongliang Li, Na Zhou, et al.
Nanomaterials (Basel, Switzerland)|May 24, 2024
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and TechnologyHenry H Radamson, Yuanhao Miao, Ziwei Zhou, et al.
Pageof 4

Showing results (31-40 of 38) with videos related to

Sort By:
Pageof 4
You have reached the last page of results.This site can display upto 38 results.
Nanomaterials (Basel, Switzerland)|April 3, 2021
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets DevicesQingzhu Zhang, Jie Gu, Renren Xu, et al.
ACS Applied Materials & Interfaces|November 21, 2023
Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process ConditionsZhenzhen Kong, Yanpeng Song, Hailing Wang, et al.
Nanomaterials (Basel, Switzerland)|August 14, 2020
State of the Art and Future Perspectives in Advanced CMOS TechnologyHenry H Radamson, Huilong Zhu, Zhenhua Wu, et al.
ACS Applied Materials & Interfaces|May 11, 2023
Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two MillionZhenzhen Kong, Zonghu Li, Gang Cao, et al.
ACS Nano|October 12, 2023
Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High PerformanceLu Xie, Huilong Zhu, Yongkui Zhang, et al.
Materials (Basel, Switzerland)|February 13, 2020
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nmJunjie Li, Yongliang Li, Na Zhou, et al.
Nanomaterials (Basel, Switzerland)|April 25, 2020
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-TransistorsJunjie Li, Yongliang Li, Na Zhou, et al.
Nanomaterials (Basel, Switzerland)|May 24, 2024
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and TechnologyHenry H Radamson, Yuanhao Miao, Ziwei Zhou, et al.
Pageof 4