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Scientific Reports|June 3, 2017
Integrated fiber optical receiver reducing the gap to the quantum limitHorst Zimmermann, Bernhard Steindl, Michael Hofbauer, et al.Optics Letters|February 4, 2014
0.35 μm CMOS avalanche photodiode with high responsivity and responsivity-bandwidth productWolfgang Gaberl, Bernhard Steindl, Kerstin Schneider-Hornstein, et al.Applied Optics|October 6, 2021
Photon detection probability enhancement using an anti-reflection coating in CMOS-based SPADsSeyed Saman Kohneh Poushi, Hiwa Mahmoudi, Michael Hofbauer, et al.Micromachines|September 23, 2020
Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche DiodesBernhard Goll, Bernhard Steindl, Horst ZimmermannSensors (Basel, Switzerland)|March 11, 2023
Indirect Time-of-Flight with GHz Correlation Frequency and Integrated SPAD Reaching Sub-100 µm Precision in 0.35 µm CMOSMichael Hauser, Horst Zimmermann, Michael HofbauerOptics Express|February 3, 2016
OWC using a monolithically integrated 200 µm APD OEIC in 0.35 µm BiCMOS technologyDinka Milovančev, Tomislav Jukić, Paul Brandl, et al.Optics Express|May 5, 2019
Optical wireless APD receivers in 0.35 µm HV CMOS technology with large detection areaDinka Milovančev, Paul Brandl, Tomislav Jukić, et al.Sensors (Basel, Switzerland)|August 28, 2021
Noise and Breakdown Characterization of SPAD Detectors with Time-Gated Photon-Counting OperationHiwa Mahmoudi, Michael Hofbauer, Bernhard Goll, et al.Sensors (Basel, Switzerland)|April 13, 2023
Area and Bandwidth Enhancement of an n+/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS TechnologySeyed Saman Kohneh Poushi, Bernhard Goll, Kerstin Schneider-Hornstein, et al.Sensors (Basel, Switzerland)|December 23, 2023
Multi-Channel Gating Chip in 0.18 µm High-Voltage CMOS for Quantum ApplicationsChristoph Ribisch, Michael Hofbauer, Seyed Saman Kohneh Poushi, et al.Pageof 3