Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Houfang Liu

Showing results (21-30 of 25) with videos related to

Pageof 3
Sort By:
You have reached the last page of results.This site can display upto 25 results.
ACS Nano|July 21, 2025
Facet-Engineered Atomic Interface and On-Chip Continuous-Amplitude Modulated Recovery Enabling Ultra-High Endurance for Hafnium-Based Ferroelectric MemoriesDapeng Huang, Hang Liu, Houfang Liu, et al.
Science Advances|September 4, 2024
Two-dimensional fully ferroelectric-gated hybrid computing-in-memory hardware for high-precision and energy-efficient dynamic trackingTian Lu, Junying Xue, Penghui Shen, et al.
Nano Letters|January 22, 2024
Programmable Ferroelectricity in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Enabled by Oxygen Defect EngineeringMinghao Shao, Houfang Liu, Ri He, et al.
Nature|January 28, 2026
A flexible digital compute-in-memory chip for edge intelligenceAnzhi Yan, Jianlan Yan, Penghui Shen, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|October 9, 2023
Landauer-QFLPS Model for Mixed Schottky-Ohmic Contact Two-Dimensional TransistorsZhao-Yi Yan, Zhan Hou, Kan-Hao Xue, et al.
Pageof 3

Showing results (21-30 of 25) with videos related to

Sort By:
Pageof 3
You have reached the last page of results.This site can display upto 25 results.
ACS Nano|July 21, 2025
Facet-Engineered Atomic Interface and On-Chip Continuous-Amplitude Modulated Recovery Enabling Ultra-High Endurance for Hafnium-Based Ferroelectric MemoriesDapeng Huang, Hang Liu, Houfang Liu, et al.
Science Advances|September 4, 2024
Two-dimensional fully ferroelectric-gated hybrid computing-in-memory hardware for high-precision and energy-efficient dynamic trackingTian Lu, Junying Xue, Penghui Shen, et al.
Nano Letters|January 22, 2024
Programmable Ferroelectricity in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Enabled by Oxygen Defect EngineeringMinghao Shao, Houfang Liu, Ri He, et al.
Nature|January 28, 2026
A flexible digital compute-in-memory chip for edge intelligenceAnzhi Yan, Jianlan Yan, Penghui Shen, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|October 9, 2023
Landauer-QFLPS Model for Mixed Schottky-Ohmic Contact Two-Dimensional TransistorsZhao-Yi Yan, Zhan Hou, Kan-Hao Xue, et al.
Pageof 3