Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Hujun Jia

Showing results (1-10 of 8) with videos related to

Pageof 1
Sort By:
Micromachines|November 8, 2018
An Improved UU-MESFET with High Power Added EfficiencyHujun Jia, Mei Hu, Shunwei Zhu
Micromachines|September 28, 2021
An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added EfficiencyHujun Jia, Xiaowei Wang, Mengyu Dong, et al.
Micromachines|April 30, 2021
A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated RegionHujun Jia, Mengyu Dong, Xiaowei Wang, et al.
Micromachines|July 20, 2019
Improved MRD 4H-SiC MESFET with High Power Added EfficiencyShunwei Zhu, Hujun Jia, Xingyu Wang, et al.
Micromachines|January 2, 2020
Improved DRUS 4H-SiC MESFET with High Power Added EfficiencyHujun Jia, Yuan Liang, Tao Li, et al.
Micromachines|July 5, 2019
Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed BufferShunwei Zhu, Hujun Jia, Tao Li, et al.
Micromachines|August 25, 2019
An Improved 4H-SiC MESFET with a Partially Low Doped ChannelHujun Jia, Yibo Tong, Tao Li, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|October 4, 2025
Ultrathin Multi-Doped Molybdenum Oxide Nanodots as a Tunable Selective BiocatalystBao Yue Zhang, Farjana Haque, Shwathy Ramesan, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
Micromachines|November 8, 2018
An Improved UU-MESFET with High Power Added EfficiencyHujun Jia, Mei Hu, Shunwei Zhu
Micromachines|September 28, 2021
An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added EfficiencyHujun Jia, Xiaowei Wang, Mengyu Dong, et al.
Micromachines|April 30, 2021
A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated RegionHujun Jia, Mengyu Dong, Xiaowei Wang, et al.
Micromachines|July 20, 2019
Improved MRD 4H-SiC MESFET with High Power Added EfficiencyShunwei Zhu, Hujun Jia, Xingyu Wang, et al.
Micromachines|January 2, 2020
Improved DRUS 4H-SiC MESFET with High Power Added EfficiencyHujun Jia, Yuan Liang, Tao Li, et al.
Micromachines|July 5, 2019
Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed BufferShunwei Zhu, Hujun Jia, Tao Li, et al.
Micromachines|August 25, 2019
An Improved 4H-SiC MESFET with a Partially Low Doped ChannelHujun Jia, Yibo Tong, Tao Li, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|October 4, 2025
Ultrathin Multi-Doped Molybdenum Oxide Nanodots as a Tunable Selective BiocatalystBao Yue Zhang, Farjana Haque, Shwathy Ramesan, et al.
Pageof 1