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Hyunjin Ji

Showing results (1-10 of 23) with videos related to

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Nanotechnology|November 17, 2018
Coulomb scattering mechanism transition in 2D layered MoTe<sub>2</sub>: effect of high-κ passivation and Schottky barrier heightMin-Kyu Joo, Yoojoo Yun, Hyunjin Ji, et al.
Journal of Nanoscience and Nanotechnology|April 22, 2018
New Insights into Mechanism of Surface Reactions of ZnO Nanorods During Electrons Beam IrradiationYoungseung Cho, Hyunjin Ji, Hyoungsub Kim, et al.
ACS Applied Materials & Interfaces|November 26, 2024
Achieving Quasi Intrinsic MoS<sub>2</sub> Performance via Liquid-Based Neutralization of Material and Interface Defects with H<sup>+</sup> ProtonsByungwook Ahn, Jaehun Ahn, Meeree Kim, et al.
Nanotechnology|May 4, 2019
Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS<sub>2</sub> DG FET under low vertical electric fieldHyunjin Ji, Hojoon Yi, Sakong Wonkil, et al.
Korean Journal of Orthodontics|March 19, 2013
New bimaxillary orthognathic surgery planning and model surgery based on the concept of six degrees of freedomJaeho Jeon, Yongdeok Kim, Jongryoul Kim, et al.
Nanoscale|June 7, 2018
Gas adsorbates are Coulomb scatterers, rather than neutral ones, in a monolayer MoS<sub>2</sub> field effect transistorHyunjin Ji, Hojoon Yi, Jinbong Seok, et al.
ACS Applied Materials & Interfaces|February 15, 2019
Defect-Affected Photocurrent in MoTe<sub>2</sub> FETsMohan Kumar Ghimire, Hyunjin Ji, Hamza Zad Gul, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 15, 2018
Probing Distinctive Electron Conduction in Multilayer Rhenium DisulfideByung Chul Lee, Junhong Na, Jun Hee Choi, et al.
Nanotechnology|October 7, 2023
Investigating charge traps in MoTe<sub>2</sub>field-effect transistors: SiO<sub>2</sub>insulator traps and MoTe<sub>2</sub>bulk trapsGiheon Kim, Dang Xuan Dang, Hamza Zad Gul, et al.
Nanoscale|November 14, 2019
Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applicationsHyebin Lee, Kookjin Lee, Yanghee Kim, et al.
Pageof 3

Showing results (1-10 of 23) with videos related to

Sort By:
Pageof 3
Nanotechnology|November 17, 2018
Coulomb scattering mechanism transition in 2D layered MoTe<sub>2</sub>: effect of high-κ passivation and Schottky barrier heightMin-Kyu Joo, Yoojoo Yun, Hyunjin Ji, et al.
Journal of Nanoscience and Nanotechnology|April 22, 2018
New Insights into Mechanism of Surface Reactions of ZnO Nanorods During Electrons Beam IrradiationYoungseung Cho, Hyunjin Ji, Hyoungsub Kim, et al.
ACS Applied Materials & Interfaces|November 26, 2024
Achieving Quasi Intrinsic MoS<sub>2</sub> Performance via Liquid-Based Neutralization of Material and Interface Defects with H<sup>+</sup> ProtonsByungwook Ahn, Jaehun Ahn, Meeree Kim, et al.
Nanotechnology|May 4, 2019
Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS<sub>2</sub> DG FET under low vertical electric fieldHyunjin Ji, Hojoon Yi, Sakong Wonkil, et al.
Korean Journal of Orthodontics|March 19, 2013
New bimaxillary orthognathic surgery planning and model surgery based on the concept of six degrees of freedomJaeho Jeon, Yongdeok Kim, Jongryoul Kim, et al.
Nanoscale|June 7, 2018
Gas adsorbates are Coulomb scatterers, rather than neutral ones, in a monolayer MoS<sub>2</sub> field effect transistorHyunjin Ji, Hojoon Yi, Jinbong Seok, et al.
ACS Applied Materials & Interfaces|February 15, 2019
Defect-Affected Photocurrent in MoTe<sub>2</sub> FETsMohan Kumar Ghimire, Hyunjin Ji, Hamza Zad Gul, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 15, 2018
Probing Distinctive Electron Conduction in Multilayer Rhenium DisulfideByung Chul Lee, Junhong Na, Jun Hee Choi, et al.
Nanotechnology|October 7, 2023
Investigating charge traps in MoTe<sub>2</sub>field-effect transistors: SiO<sub>2</sub>insulator traps and MoTe<sub>2</sub>bulk trapsGiheon Kim, Dang Xuan Dang, Hamza Zad Gul, et al.
Nanoscale|November 14, 2019
Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applicationsHyebin Lee, Kookjin Lee, Yanghee Kim, et al.
Pageof 3