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Nanotechnology
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July 22, 2021
A CMOS-compatible morphotropic phase boundary
Alireza Kashir, Hyunsang Hwang
Scientific Reports
|
August 9, 2018
Zn<sub>1-x</sub>Te<sub>x</sub> Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters
Yunmo Koo, Hyunsang Hwang
Nanotechnology
|
August 22, 2019
One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices
Seokjae Lim, Myounghoon Kwak, Hyunsang Hwang
Nanotechnology
|
June 19, 2018
Effect of cation amount in the electrolyte on characteristics of Ag/TiO<sub>2</sub> based threshold switching devices
Jongmyung Yoo, Jeonghwan Song, Hyunsang Hwang
Nanoscale
|
September 3, 2021
Towards an ideal high-κ HfO<sub>2</sub>-ZrO<sub>2</sub>-based dielectric
Alireza Kashir, Mehrdad Ghiasabadi Farahani, Hyunsang Hwang
Nanotechnology
|
October 14, 2020
A new approach to achieving strong ferroelectric properties in TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN devices
Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
May 10, 2026
Sub-Nanometer Ferroelectric Tunnel Junctions With Record-High on-Current Density Through Synergistic Microwave Annealing and High-Field Activation
Laeyong Jung, Hojung Jang, Jongseon Seo, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
January 27, 2021
Single-Atom Quantum-Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride
Revannath Dnyandeo Nikam, Krishn Gopal Rajput, Hyunsang Hwang
Nanotechnology
|
June 17, 2022
Improvement of endurance and switching speed in Hf<sub>1-</sub>Zr<i></i>O<sub>2</sub>thin films using a nanolaminate structure
Hojung Jang, Alireza Kashir, Seungyeol Oh, et al.
Frontiers in Neuroscience
|
July 12, 2021
Neural Network Training Acceleration With RRAM-Based Hybrid Synapses
Wooseok Choi, Myonghoon Kwak, Seyoung Kim, et al.
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of 6
Search research articles
Search
Showing results (1-10 of 57) with videos related to
Sort By:
Page
of 6
Nanotechnology
|
July 22, 2021
A CMOS-compatible morphotropic phase boundary
Alireza Kashir, Hyunsang Hwang
Scientific Reports
|
August 9, 2018
Zn<sub>1-x</sub>Te<sub>x</sub> Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters
Yunmo Koo, Hyunsang Hwang
Nanotechnology
|
August 22, 2019
One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices
Seokjae Lim, Myounghoon Kwak, Hyunsang Hwang
Nanotechnology
|
June 19, 2018
Effect of cation amount in the electrolyte on characteristics of Ag/TiO<sub>2</sub> based threshold switching devices
Jongmyung Yoo, Jeonghwan Song, Hyunsang Hwang
Nanoscale
|
September 3, 2021
Towards an ideal high-κ HfO<sub>2</sub>-ZrO<sub>2</sub>-based dielectric
Alireza Kashir, Mehrdad Ghiasabadi Farahani, Hyunsang Hwang
Nanotechnology
|
October 14, 2020
A new approach to achieving strong ferroelectric properties in TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN devices
Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
May 10, 2026
Sub-Nanometer Ferroelectric Tunnel Junctions With Record-High on-Current Density Through Synergistic Microwave Annealing and High-Field Activation
Laeyong Jung, Hojung Jang, Jongseon Seo, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
January 27, 2021
Single-Atom Quantum-Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride
Revannath Dnyandeo Nikam, Krishn Gopal Rajput, Hyunsang Hwang
Nanotechnology
|
June 17, 2022
Improvement of endurance and switching speed in Hf<sub>1-</sub>Zr<i></i>O<sub>2</sub>thin films using a nanolaminate structure
Hojung Jang, Alireza Kashir, Seungyeol Oh, et al.
Frontiers in Neuroscience
|
July 12, 2021
Neural Network Training Acceleration With RRAM-Based Hybrid Synapses
Wooseok Choi, Myonghoon Kwak, Seyoung Kim, et al.
Page
of 6