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Hyunsang Hwang

Showing results (21-30 of 57) with videos related to

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Nanotechnology|February 25, 2020
Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO<sub>2.7</sub> stoichiometry with high ion diffusivityJongwon Lee, Revannath Dnyandeo Nikam, Seokjae Lim, et al.
ACS Nano|July 19, 2022
On-Chip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical Random-Access Memory Synapse for Neuromorphic Computing ApplicationRevannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, et al.
Nanotechnology|December 27, 2021
A grease for domain walls motion in HfO<sub>2</sub>-based ferroelectricsAlireza Kashir, Mehrdad Ghiasabadi Farahani, Ján Lančok, et al.
Nanotechnology|July 30, 2020
Sodium-based nano-ionic synaptic transistor with improved retention characteristicsKyumin Lee, Jongwon Lee, Revannath Dnyandeo Nikam, et al.
Journal of Nanoscience and Nanotechnology|August 4, 2016
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAMJeonghwan Song, Daeseok Lee, Jiyong Woo, et al.
Nanotechnology|June 5, 2018
A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector applicationSolomon Amsalu Chekol, Jongmyung Yoo, Jaehyuk Park, et al.
ACS Applied Materials & Interfaces|January 19, 2026
Enhancing Performance and Reliability of FeNAND Hybrid Memory via a 2D-WS<sub>2</sub> Layer for Charge Trapping and Ferroelectric CrystallizationHojung Jang, Seungkwon Hwang, Jongwon Yoon, et al.
Nanotechnology|May 7, 2009
The effect of excimer laser annealing on ZnO nanowires and their field effect transistorsJongsun Maeng, Sungho Heo, Gunho Jo, et al.
Scientific Reports|December 13, 2019
Near ideal synaptic functionalities in Li ion synaptic transistor using Li<sub>3</sub>PO<sub>x</sub>Se<sub>x</sub> electrolyte with high ionic conductivityRevannath Dnyandeo Nikam, Myonghoon Kwak, Jongwon Lee, et al.
Scientific Reports|June 24, 2017
Multi-layered NiO<sub>y</sub>/NbO<sub>x</sub>/NiO<sub>y</sub> fast drift-free threshold switch with high I<sub>on</sub>/I<sub>off</sub> ratio for selector applicationJaehyuk Park, Tobias Hadamek, Agham B Posadas, et al.
Pageof 6

Showing results (21-30 of 57) with videos related to

Sort By:
Pageof 6
Nanotechnology|February 25, 2020
Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO<sub>2.7</sub> stoichiometry with high ion diffusivityJongwon Lee, Revannath Dnyandeo Nikam, Seokjae Lim, et al.
ACS Nano|July 19, 2022
On-Chip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical Random-Access Memory Synapse for Neuromorphic Computing ApplicationRevannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, et al.
Nanotechnology|December 27, 2021
A grease for domain walls motion in HfO<sub>2</sub>-based ferroelectricsAlireza Kashir, Mehrdad Ghiasabadi Farahani, Ján Lančok, et al.
Nanotechnology|July 30, 2020
Sodium-based nano-ionic synaptic transistor with improved retention characteristicsKyumin Lee, Jongwon Lee, Revannath Dnyandeo Nikam, et al.
Journal of Nanoscience and Nanotechnology|August 4, 2016
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAMJeonghwan Song, Daeseok Lee, Jiyong Woo, et al.
Nanotechnology|June 5, 2018
A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector applicationSolomon Amsalu Chekol, Jongmyung Yoo, Jaehyuk Park, et al.
ACS Applied Materials & Interfaces|January 19, 2026
Enhancing Performance and Reliability of FeNAND Hybrid Memory via a 2D-WS<sub>2</sub> Layer for Charge Trapping and Ferroelectric CrystallizationHojung Jang, Seungkwon Hwang, Jongwon Yoon, et al.
Nanotechnology|May 7, 2009
The effect of excimer laser annealing on ZnO nanowires and their field effect transistorsJongsun Maeng, Sungho Heo, Gunho Jo, et al.
Scientific Reports|December 13, 2019
Near ideal synaptic functionalities in Li ion synaptic transistor using Li<sub>3</sub>PO<sub>x</sub>Se<sub>x</sub> electrolyte with high ionic conductivityRevannath Dnyandeo Nikam, Myonghoon Kwak, Jongwon Lee, et al.
Scientific Reports|June 24, 2017
Multi-layered NiO<sub>y</sub>/NbO<sub>x</sub>/NiO<sub>y</sub> fast drift-free threshold switch with high I<sub>on</sub>/I<sub>off</sub> ratio for selector applicationJaehyuk Park, Tobias Hadamek, Agham B Posadas, et al.
Pageof 6