Showing results (11-20 of 62) with videos related to
Sort By:
Pageof 7
Scientific Reports|February 26, 2016
III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocationJi-Hyun Hur, Sanghun JeonSensors (Basel, Switzerland)|May 20, 2022
End-to-End Sentence-Level Multi-View Lipreading Architecture with Spatial Attention Module Integrated Multiple CNNs and Cascaded Local Self-Attention-CTCSanghun Jeon, Mun Sang KimACS Applied Materials & Interfaces|August 5, 2017
Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating VoltageDong-Ho Kang, Woo-Young Choi, Hyunsuk Woo, et al.Nano Convergence|October 1, 2022
A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technologyMinhyun Jung, Venkateswarlu Gaddam, Sanghun JeonACS Applied Materials & Interfaces|December 14, 2020
Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias EngineeringYoungin Goh, Junghyeon Hwang, Sanghun JeonRSC Advances|May 13, 2022
Scalable and facile synthesis of stretchable thermoelectric fabric for wearable self-powered temperature sensorsMinhyun Jung, Sanghun Jeon, Jihyun BaeScientific Reports|September 21, 2017
Fast and slow transient charging of Oxide Semiconductor TransistorsTaeho Kim, Sungho Park, Sanghun JeonSmall (Weinheim an Der Bergstrasse, Germany)|October 20, 2023
Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel JunctionsJunghyeon Hwang, Youngin Goh, Sanghun JeonNanotechnology|November 28, 2017
Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V methodJunghak Park, Ji-Hyun Hur, Sanghun JeonNanotechnology|April 21, 2016
Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of statesTaeho Kim, Ji-Hyun Hur, Sanghun JeonPageof 7