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Iddo Amit

Showing results (1-10 of 13) with videos related to

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ACS Applied Materials & Interfaces|December 10, 2015
Impact of Dopant Compensation on Graded p-n Junctions in Si NanowiresIddo Amit, Nari Jeon, Lincoln J Lauhon, et al.
ACS Applied Materials & Interfaces|November 15, 2019
Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate ScreeningRonen Dagan, Yonatan Vaknin, Dror Weisman, et al.
Nano Letters|October 10, 2014
Density and energy distribution of interface states in the grain boundaries of polysilicon nanowireIddo Amit, Danny Englander, Dror Horvitz, et al.
Nanotechnology|August 7, 2015
Potential barrier height at the grain boundaries of a poly-silicon nanowireAssaf Shamir, Iddo Amit, Danny Englander, et al.
Nature Communications|April 27, 2018
Strain-engineered inverse charge-funnelling in layered semiconductorsAdolfo De Sanctis, Iddo Amit, Steven P Hepplestone, et al.
Nanotechnology|February 25, 2017
Functionalised hexagonal-domain graphene for position-sensitive photodetectorsAdolfo De Sanctis, Matthew D Barnes, Iddo Amit, et al.
ACS Nano|October 23, 2012
Contact doping of silicon wafers and nanostructures with phosphine oxide monolayersOri Hazut, Arunava Agarwala, Iddo Amit, et al.
Nano Letters|November 15, 2013
Barrier height measurement of metal contacts to Si nanowires using internal photoemission of hot carriersKunho Yoon, Jerome K Hyun, Justin G Connell, et al.
Nano Letters|May 15, 2013
Spatially resolved correlation of active and total doping concentrations in VLS grown nanowiresIddo Amit, Uri Givan, Justin G Connell, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 16, 2017
Role of Charge Traps in the Performance of Atomically Thin TransistorsIddo Amit, Tobias J Octon, Nicola J Townsend, et al.
Pageof 2

Showing results (1-10 of 13) with videos related to

Sort By:
Pageof 2
ACS Applied Materials & Interfaces|December 10, 2015
Impact of Dopant Compensation on Graded p-n Junctions in Si NanowiresIddo Amit, Nari Jeon, Lincoln J Lauhon, et al.
ACS Applied Materials & Interfaces|November 15, 2019
Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate ScreeningRonen Dagan, Yonatan Vaknin, Dror Weisman, et al.
Nano Letters|October 10, 2014
Density and energy distribution of interface states in the grain boundaries of polysilicon nanowireIddo Amit, Danny Englander, Dror Horvitz, et al.
Nanotechnology|August 7, 2015
Potential barrier height at the grain boundaries of a poly-silicon nanowireAssaf Shamir, Iddo Amit, Danny Englander, et al.
Nature Communications|April 27, 2018
Strain-engineered inverse charge-funnelling in layered semiconductorsAdolfo De Sanctis, Iddo Amit, Steven P Hepplestone, et al.
Nanotechnology|February 25, 2017
Functionalised hexagonal-domain graphene for position-sensitive photodetectorsAdolfo De Sanctis, Matthew D Barnes, Iddo Amit, et al.
ACS Nano|October 23, 2012
Contact doping of silicon wafers and nanostructures with phosphine oxide monolayersOri Hazut, Arunava Agarwala, Iddo Amit, et al.
Nano Letters|November 15, 2013
Barrier height measurement of metal contacts to Si nanowires using internal photoemission of hot carriersKunho Yoon, Jerome K Hyun, Justin G Connell, et al.
Nano Letters|May 15, 2013
Spatially resolved correlation of active and total doping concentrations in VLS grown nanowiresIddo Amit, Uri Givan, Justin G Connell, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 16, 2017
Role of Charge Traps in the Performance of Atomically Thin TransistorsIddo Amit, Tobias J Octon, Nicola J Townsend, et al.
Pageof 2