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ACS Omega|April 6, 2022
Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride NanoparticlesWon-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, et al.Journal of Nanoscience and Nanotechnology|March 5, 2020
Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiNJun Hyeok Jung, Min Su Cho, Won Douk Jang, et al.Journal of Nanoscience and Nanotechnology|May 12, 2015
Heteromaterial gate tunneling field-effect transistor for high-speed and radio-frequency applicationsYoung Jun Yoon, Jae Hwa Seo, Eou-Sik Cho, et al.Journal of Nanoscience and Nanotechnology|January 5, 2016
Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power ApplicationsSung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, et al.Nanomaterials (Basel, Switzerland)|June 10, 2023
Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing TreatmentJunhao Feng, Sang-Hwa Jeon, Jaehoon Park, et al.Micromachines|August 27, 2021
Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-TreatmentYoung Jun Yoon, Jae Sang Lee, Jae Kwon Suk, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETsMin Su Cho, Young Jun Yoon, Bo Gyeong Kim, et al.Materials (Basel, Switzerland)|November 9, 2024
Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y<sub>2</sub>O<sub>3</sub> RRAM Devices Using Mono-Ethanolamine AdditivesSeongwon Heo, Soohyun Choi, Sangwoo Lee, et al.Journal of Nanoscience and Nanotechnology|April 22, 2018
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless TransistorBo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, et al.Scientific Reports|August 24, 2022
3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influenceSang Ho Lee, Jin Park, So Ra Min, et al.Pageof 6