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ACS Omega
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April 6, 2022
Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride Nanoparticles
Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, et al.
Journal of Nanoscience and Nanotechnology
|
March 5, 2020
Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiN
Jun Hyeok Jung, Min Su Cho, Won Douk Jang, et al.
Journal of Nanoscience and Nanotechnology
|
May 12, 2015
Heteromaterial gate tunneling field-effect transistor for high-speed and radio-frequency applications
Young Jun Yoon, Jae Hwa Seo, Eou-Sik Cho, et al.
Journal of Nanoscience and Nanotechnology
|
January 5, 2016
Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications
Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, et al.
Nanomaterials (Basel, Switzerland)
|
June 10, 2023
Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment
Junhao Feng, Sang-Hwa Jeon, Jaehoon Park, et al.
Micromachines
|
August 27, 2021
Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment
Young Jun Yoon, Jae Sang Lee, Jae Kwon Suk, et al.
Journal of Nanoscience and Nanotechnology
|
April 28, 2019
Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETs
Min Su Cho, Young Jun Yoon, Bo Gyeong Kim, et al.
Materials (Basel, Switzerland)
|
November 9, 2024
Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y<sub>2</sub>O<sub>3</sub> RRAM Devices Using Mono-Ethanolamine Additives
Seongwon Heo, Soohyun Choi, Sangwoo Lee, et al.
Journal of Nanoscience and Nanotechnology
|
April 22, 2018
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor
Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, et al.
Scientific Reports
|
August 24, 2022
3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence
Sang Ho Lee, Jin Park, So Ra Min, et al.
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Search research articles
Search
Showing results (21-30 of 59) with videos related to
Sort By:
Page
of 6
ACS Omega
|
April 6, 2022
Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride Nanoparticles
Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, et al.
Journal of Nanoscience and Nanotechnology
|
March 5, 2020
Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiN
Jun Hyeok Jung, Min Su Cho, Won Douk Jang, et al.
Journal of Nanoscience and Nanotechnology
|
May 12, 2015
Heteromaterial gate tunneling field-effect transistor for high-speed and radio-frequency applications
Young Jun Yoon, Jae Hwa Seo, Eou-Sik Cho, et al.
Journal of Nanoscience and Nanotechnology
|
January 5, 2016
Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications
Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, et al.
Nanomaterials (Basel, Switzerland)
|
June 10, 2023
Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment
Junhao Feng, Sang-Hwa Jeon, Jaehoon Park, et al.
Micromachines
|
August 27, 2021
Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment
Young Jun Yoon, Jae Sang Lee, Jae Kwon Suk, et al.
Journal of Nanoscience and Nanotechnology
|
April 28, 2019
Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETs
Min Su Cho, Young Jun Yoon, Bo Gyeong Kim, et al.
Materials (Basel, Switzerland)
|
November 9, 2024
Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y<sub>2</sub>O<sub>3</sub> RRAM Devices Using Mono-Ethanolamine Additives
Seongwon Heo, Soohyun Choi, Sangwoo Lee, et al.
Journal of Nanoscience and Nanotechnology
|
April 22, 2018
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor
Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, et al.
Scientific Reports
|
August 24, 2022
3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence
Sang Ho Lee, Jin Park, So Ra Min, et al.
Page
of 6