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In-Man Kang

Showing results (21-30 of 59) with videos related to

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ACS Omega|April 6, 2022
Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride NanoparticlesWon-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, et al.
Journal of Nanoscience and Nanotechnology|March 5, 2020
Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiNJun Hyeok Jung, Min Su Cho, Won Douk Jang, et al.
Journal of Nanoscience and Nanotechnology|May 12, 2015
Heteromaterial gate tunneling field-effect transistor for high-speed and radio-frequency applicationsYoung Jun Yoon, Jae Hwa Seo, Eou-Sik Cho, et al.
Journal of Nanoscience and Nanotechnology|January 5, 2016
Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power ApplicationsSung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, et al.
Nanomaterials (Basel, Switzerland)|June 10, 2023
Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing TreatmentJunhao Feng, Sang-Hwa Jeon, Jaehoon Park, et al.
Micromachines|August 27, 2021
Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-TreatmentYoung Jun Yoon, Jae Sang Lee, Jae Kwon Suk, et al.
Journal of Nanoscience and Nanotechnology|April 28, 2019
Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETsMin Su Cho, Young Jun Yoon, Bo Gyeong Kim, et al.
Materials (Basel, Switzerland)|November 9, 2024
Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y<sub>2</sub>O<sub>3</sub> RRAM Devices Using Mono-Ethanolamine AdditivesSeongwon Heo, Soohyun Choi, Sangwoo Lee, et al.
Journal of Nanoscience and Nanotechnology|April 22, 2018
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless TransistorBo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, et al.
Scientific Reports|August 24, 2022
3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influenceSang Ho Lee, Jin Park, So Ra Min, et al.
Pageof 6

Showing results (21-30 of 59) with videos related to

Sort By:
Pageof 6
ACS Omega|April 6, 2022
Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride NanoparticlesWon-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, et al.
Journal of Nanoscience and Nanotechnology|March 5, 2020
Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiNJun Hyeok Jung, Min Su Cho, Won Douk Jang, et al.
Journal of Nanoscience and Nanotechnology|May 12, 2015
Heteromaterial gate tunneling field-effect transistor for high-speed and radio-frequency applicationsYoung Jun Yoon, Jae Hwa Seo, Eou-Sik Cho, et al.
Journal of Nanoscience and Nanotechnology|January 5, 2016
Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power ApplicationsSung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, et al.
Nanomaterials (Basel, Switzerland)|June 10, 2023
Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing TreatmentJunhao Feng, Sang-Hwa Jeon, Jaehoon Park, et al.
Micromachines|August 27, 2021
Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-TreatmentYoung Jun Yoon, Jae Sang Lee, Jae Kwon Suk, et al.
Journal of Nanoscience and Nanotechnology|April 28, 2019
Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETsMin Su Cho, Young Jun Yoon, Bo Gyeong Kim, et al.
Materials (Basel, Switzerland)|November 9, 2024
Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y<sub>2</sub>O<sub>3</sub> RRAM Devices Using Mono-Ethanolamine AdditivesSeongwon Heo, Soohyun Choi, Sangwoo Lee, et al.
Journal of Nanoscience and Nanotechnology|April 22, 2018
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless TransistorBo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, et al.
Scientific Reports|August 24, 2022
3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influenceSang Ho Lee, Jin Park, So Ra Min, et al.
Pageof 6