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Iuliana Radu

Showing results (1-10 of 18) with videos related to

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Advanced Materials (Deerfield Beach, Fla.)|September 7, 2022
Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor CircuitsTom Schram, Surajit Sutar, Iuliana Radu, et al.
Physical Review Letters|December 31, 2005
Magnetic-field asymmetry of nonlinear transport in carbon nanotubesJiang Wei, Michael Shimogawa, Zenghui Wang, et al.
Scientific Reports|December 21, 2017
Proposal for nanoscale cascaded plasmonic majority gates for non-Boolean computationSourav Dutta, Odysseas Zografos, Surya Gurunarayanan, et al.
Scientific Reports|July 12, 2017
Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology NodesTarun Kumar Agarwal, Bart Soree, Iuliana Radu, et al.
Nanotechnology|January 7, 2021
Understanding ambipolar transport in MoS<sub>2</sub> field effect transistors: the substrate is the keyVivek Mootheri, Alessandra Leonhardt, Devin Verreck, et al.
Nanotechnology|December 16, 2016
Two-dimensional WS<sub>2</sub> nanoribbon deposition by conversion of pre-patterned amorphous siliconMarkus H Heyne, Jean-François de Marneffe, Annelies Delabie, et al.
Nanoscale|December 2, 2016
Highly efficient and stable MoS<sub>2</sub> FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coatingCésar J Lockhart de la Rosa, Amirhasan Nourbakhsh, Markus Heyne, et al.
Nanoscale|July 22, 2017
From the metal to the channel: a study of carrier injection through the metal/2D MoS<sub>2</sub> interfaceGoutham Arutchelvan, César J Lockhart de la Rosa, Philippe Matagne, et al.
Nano Letters|October 31, 2023
High-Performance WSe<sub>2</sub> Top-Gate Devices with Strong Spacer DopingPo-Hsun Ho, Yu-Ying Yang, Sui-An Chou, et al.
Scientific Reports|July 9, 2016
Polarity control in WSe2 double-gate transistorsGiovanni V Resta, Surajit Sutar, Yashwanth Balaji, et al.
Pageof 2

Showing results (1-10 of 18) with videos related to

Sort By:
Pageof 2
Advanced Materials (Deerfield Beach, Fla.)|September 7, 2022
Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor CircuitsTom Schram, Surajit Sutar, Iuliana Radu, et al.
Physical Review Letters|December 31, 2005
Magnetic-field asymmetry of nonlinear transport in carbon nanotubesJiang Wei, Michael Shimogawa, Zenghui Wang, et al.
Scientific Reports|December 21, 2017
Proposal for nanoscale cascaded plasmonic majority gates for non-Boolean computationSourav Dutta, Odysseas Zografos, Surya Gurunarayanan, et al.
Scientific Reports|July 12, 2017
Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology NodesTarun Kumar Agarwal, Bart Soree, Iuliana Radu, et al.
Nanotechnology|January 7, 2021
Understanding ambipolar transport in MoS<sub>2</sub> field effect transistors: the substrate is the keyVivek Mootheri, Alessandra Leonhardt, Devin Verreck, et al.
Nanotechnology|December 16, 2016
Two-dimensional WS<sub>2</sub> nanoribbon deposition by conversion of pre-patterned amorphous siliconMarkus H Heyne, Jean-François de Marneffe, Annelies Delabie, et al.
Nanoscale|December 2, 2016
Highly efficient and stable MoS<sub>2</sub> FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coatingCésar J Lockhart de la Rosa, Amirhasan Nourbakhsh, Markus Heyne, et al.
Nanoscale|July 22, 2017
From the metal to the channel: a study of carrier injection through the metal/2D MoS<sub>2</sub> interfaceGoutham Arutchelvan, César J Lockhart de la Rosa, Philippe Matagne, et al.
Nano Letters|October 31, 2023
High-Performance WSe<sub>2</sub> Top-Gate Devices with Strong Spacer DopingPo-Hsun Ho, Yu-Ying Yang, Sui-An Chou, et al.
Scientific Reports|July 9, 2016
Polarity control in WSe2 double-gate transistorsGiovanni V Resta, Surajit Sutar, Yashwanth Balaji, et al.
Pageof 2