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Advanced Materials (Deerfield Beach, Fla.)|April 24, 2016
A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping TechniqueSeo-Hyeon Jo, Dong-Ho Kang, Jaewoo Shim, et al.Nature Communications|December 4, 2018
Artificial optic-neural synapse for colored and color-mixed pattern recognitionSeunghwan Seo, Seo-Hyeon Jo, Sungho Kim, et al.Nanoscale|June 28, 2019
Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuitsJaewoo Shim, Sung Woon Jang, Ji-Hye Lim, et al.Optics Letters|August 15, 2014
Germanium p-i-n avalanche photodetector fabricated by point defect healing processJaewoo Shim, Dong-Ho Kang, Gwangwe Yoo, et al.ACS Nano|April 18, 2022
High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective ContactsKwan-Ho Kim, Maksim Andreev, Soodon Choi, et al.Advanced Materials (Deerfield Beach, Fla.)|May 21, 2016
High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma TreatmentJaewoo Shim, Aely Oh, Dong-Ho Kang, et al.Nanoscale Horizons|April 1, 2020
A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memoryKwan-Ho Kim, Hyung-Youl Park, Jaewoo Shim, et al.Advanced Materials (Deerfield Beach, Fla.)|May 10, 2016
Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport MechanismJaewoo Shim, Hyo Seok Kim, Yoon Su Shim, et al.Nature Nanotechnology|February 12, 2020
Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxySang-Hoon Bae, Kuangye Lu, Yimo Han, et al.Science (New York, N.Y.)|October 13, 2018
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materialsJaewoo Shim, Sang-Hoon Bae, Wei Kong, et al.Pageof 4