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Nanotechnology|November 17, 2015
Dislocation scatterings in p-type Si(1-x)Ge(x) under weak electric fieldJi-Hyun Hur, Sanghun JeonScientific Reports|February 26, 2016
III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocationJi-Hyun Hur, Sanghun JeonNanotechnology|November 28, 2017
Quantitative analysis of charge trapping and classification of sub-gap states in MoS<sub>2</sub> TFT by pulse I-V methodJunghak Park, Ji-Hyun Hur, Sanghun JeonNanotechnology|April 21, 2016
Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of statesTaeho Kim, Ji-Hyun Hur, Sanghun JeonNanotechnology|July 2, 2016
Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistorsTaeho Kim, Yunyong Nam, Ji-Hyun Hur, et al.Scientific Reports|November 21, 2019
The origin of the exceptionally low activation energy of oxygen vacancy in tantalum pentoxide based resistive memoryJi-Hyun HurPhysical Chemistry Chemical Physics : PCCP|November 16, 2021
First-principles study on multiferroicity in the Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>/In<sub>2</sub>Se<sub>3</sub> heterostructure influenced by finite strainsJi-Hyun HurScientific Reports|March 28, 2020
First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memoryJi-Hyun HurJournal of Nanoscience and Nanotechnology|March 5, 2020
The Parametric Study of Armchair Graphene Nanoribbon Field Effect Transistor by Non-Equilibrium Green's Function MethodJi-Hyun HurACS Applied Materials & Interfaces|December 22, 2010
Nanometer-scale oxide thin film transistor with potential for high-density image sensor applicationsSanghun Jeon, Sungho Park, Ihun Song, et al.Pageof 8