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Joerg Appenzeller

Showing results (1-10 of 54) with videos related to

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Nano Letters|June 28, 2013
Where does the current flow in two-dimensional layered systems?Saptarshi Das, Joerg Appenzeller
ACS Nano|February 14, 2017
Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe<sub>2</sub> Schottky Barrier TransistorsAbhijith Prakash, Joerg Appenzeller
Nano Letters|July 31, 2009
Screening and interlayer coupling in multilayer graphene field-effect transistorsYang Sui, Joerg Appenzeller
Nano Letters|August 24, 2011
FeTRAM. An organic ferroelectric material based novel random access memory cellSaptarshi Das, Joerg Appenzeller
Nano Letters|December 30, 2014
Tunability of short-channel effects in MoS2 field-effect devicesFeng Zhang, Joerg Appenzeller
ACS Nano|March 11, 2021
Artificial Sub-60 Millivolts/Decade Switching in a Metal-Insulator-Metal-Insulator-Semiconductor Transistor without a Ferroelectric ComponentPeng Wu, Joerg Appenzeller
Nano Letters|March 29, 2012
Graphene-based frequency triplerHong-Yan Chen, Joerg Appenzeller
Nano Letters|July 19, 2017
Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-JunctionsRuiping Zhou, Vaibhav Ostwal, Joerg Appenzeller
Advanced Materials (Deerfield Beach, Fla.)|January 14, 2020
Efficient Spin-Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr<sub>2</sub> Ge<sub>2</sub> Te<sub>6</sub>Vaibhav Ostwal, Tingting Shen, Joerg Appenzeller
ACS Nano|April 5, 2016
Strain Engineering for Transition Metal Dichalcogenides Based Field Effect TransistorsTingting Shen, Ashish V Penumatcha, Joerg Appenzeller
Pageof 6

Showing results (1-10 of 54) with videos related to

Sort By:
Pageof 6
Nano Letters|June 28, 2013
Where does the current flow in two-dimensional layered systems?Saptarshi Das, Joerg Appenzeller
ACS Nano|February 14, 2017
Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe<sub>2</sub> Schottky Barrier TransistorsAbhijith Prakash, Joerg Appenzeller
Nano Letters|July 31, 2009
Screening and interlayer coupling in multilayer graphene field-effect transistorsYang Sui, Joerg Appenzeller
Nano Letters|August 24, 2011
FeTRAM. An organic ferroelectric material based novel random access memory cellSaptarshi Das, Joerg Appenzeller
Nano Letters|December 30, 2014
Tunability of short-channel effects in MoS2 field-effect devicesFeng Zhang, Joerg Appenzeller
ACS Nano|March 11, 2021
Artificial Sub-60 Millivolts/Decade Switching in a Metal-Insulator-Metal-Insulator-Semiconductor Transistor without a Ferroelectric ComponentPeng Wu, Joerg Appenzeller
Nano Letters|March 29, 2012
Graphene-based frequency triplerHong-Yan Chen, Joerg Appenzeller
Nano Letters|July 19, 2017
Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-JunctionsRuiping Zhou, Vaibhav Ostwal, Joerg Appenzeller
Advanced Materials (Deerfield Beach, Fla.)|January 14, 2020
Efficient Spin-Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr<sub>2</sub> Ge<sub>2</sub> Te<sub>6</sub>Vaibhav Ostwal, Tingting Shen, Joerg Appenzeller
ACS Nano|April 5, 2016
Strain Engineering for Transition Metal Dichalcogenides Based Field Effect TransistorsTingting Shen, Ashish V Penumatcha, Joerg Appenzeller
Pageof 6