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Joonmyoung Lee

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Nanotechnology|November 8, 2011
Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applicationsXinjun Liu, Sharif Md Sadaf, Myungwoo Son, et al.
Nanotechnology|August 5, 2009
An electrically modifiable synapse array of resistive switching memoryHyejung Choi, Heesoo Jung, Joonmyoung Lee, et al.
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Showing results (1-10 of 2) with videos related to

Sort By:
Pageof 1
Nanotechnology|November 8, 2011
Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applicationsXinjun Liu, Sharif Md Sadaf, Myungwoo Son, et al.
Nanotechnology|August 5, 2009
An electrically modifiable synapse array of resistive switching memoryHyejung Choi, Heesoo Jung, Joonmyoung Lee, et al.
Pageof 1