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Nature Communications|April 29, 2024
Integrated 2D multi-fin field-effect transistorsMengshi Yu, Congwei Tan, Yuling Yin, et al.
Nano Letters|April 25, 2022
Strain-Free Layered Semiconductors for 2D Transistors with On-State Current Density Exceeding 1.3 mA μm-1Congwei Tan, Jianfeng Jiang, Jingyue Wang, et al.
Nature Materials|February 14, 2025
Low-power 2D gate-all-around logics via epitaxial monolithic 3D integrationJunchuan Tang, Jianfeng Jiang, Xiaoyin Gao, et al.
Nature|March 23, 2023
2D fin field-effect transistors integrated with epitaxial high-k gate oxideCongwei Tan, Mengshi Yu, Junchuan Tang, et al.
Nature Communications|November 26, 2025
Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistorsChengyuan Xue, Congwei Tan, Xin Gao, et al.
ACS Nano|July 14, 2026
Reliability and Stability Issues in Bi2O2Se/β-Bi2SeO5 Field-Effect TransistorsMina Bahrami, Mohammad Rasool Davoudi, Axel Verdianu, et al.
Journal of the American Chemical Society|April 3, 2023
Dual-Affinity Graphene Sheets for High-Resolution Cryo-Electron MicroscopyHang Cheng, Liming Zheng, Nan Liu, et al.
Nature Communications|September 15, 2022
Integrated wafer-scale ultra-flat graphene by gradient surface energy modulationXin Gao, Liming Zheng, Fang Luo, et al.
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