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Nanoscale Advances|May 1, 2025
An area and power efficient ternary serial adder using phase composite ZnO stack channel FETsKiyung Kim, Sunmean Kim, So-Young Kim, et al.
Nanoscale Advances|March 16, 2026
Revealing and engineering contact-origin noise in ultrathin tellurium transistorsHae-Won Lee, Minjae Kim, Junho Ban, et al.
Nanomaterials (Basel, Switzerland)|June 24, 2020
Channel Defect Profiling and Passivation for ZnO Thin-Film TransistorsSoo Cheol Kang, So Young Kim, Sang Kyung Lee, et al.
ACS Applied Materials & Interfaces|February 10, 2025
Applications of a ZnO-Te Antiambipolar Switch for Drastic Power and Area ScalingJae Hyeon Jun, Yongsu Lee, Hae-Won Lee, et al.
ACS Applied Materials & Interfaces|June 3, 2020
Performance Degradation in Graphene-ZnO Barristors Due to Graphene Edge ContactSo-Young Kim, Junga Ryou, Min Jae Kim, et al.
Nano Convergence|March 9, 2023
Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning processYongsu Lee, Heejin Kwon, Seung-Mo Kim, et al.
ACS Nano|June 28, 2022
Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic CircuitsYongsu Lee, Sunmean Kim, Ho-In Lee, et al.
Scientific Reports|November 13, 2022
Dual-channel P-type ternary DNTT-graphene barristorYongsu Lee, Seung-Mo Kim, Kiyung Kim, et al.
Nanoscale Horizons|August 30, 2024
Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistorsMinjae Kim, Yongsu Lee, Kyuheon Kim, et al.
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