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Small (Weinheim an Der Bergstrasse, Germany)
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April 7, 2025
Low Carbon Residue Growth of Wafer-Scale MoS<sub>2</sub>
Yihe Liu, He Jiang, Li Gao, et al.
Small Methods
|
August 8, 2023
Approaching Ohmic Contacts for Ideal Monolayer MoS<sub>2</sub> Transistors Through Sulfur-Vacancy Engineering
Jiankun Xiao, Kuanglei Chen, Xiankun Zhang, et al.
Nature Communications
|
March 16, 2026
Generic logic block based on bias-gated 2D MoS<sub>2</sub> transistors
Xiaofu Wei, Zhangyi Chen, Kuanglei Chen, et al.
Nature Materials
|
January 10, 2025
Two-dimensional Czochralski growth of single-crystal MoS<sub>2</sub>
He Jiang, Xiankun Zhang, Kuanglei Chen, et al.
ACS Nano
|
April 2, 2026
Scalable Reconfigurable Circuits with Double-Gate MoS<sub>2</sub> Transistors
Kuanglei Chen, Yu Geng, Jiankun Xiao, et al.
National Science Review
|
March 13, 2026
Large-scale gate-all-around MoS<sub>2</sub> transistor array through lossless monolithic 3D integration
Chao Chen, Kuanglei Chen, Hang Zhao, et al.
Science (New York, N.Y.)
|
November 20, 2025
Atomic layer bonding contacts in two-dimensional semiconductors
Li Gao, Zhangyi Chen, Zhenghui Fang, et al.
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Search research articles
Search
Showing results (1-10 of 7) with videos related to
Sort By:
Page
of 1
Small (Weinheim an Der Bergstrasse, Germany)
|
April 7, 2025
Low Carbon Residue Growth of Wafer-Scale MoS<sub>2</sub>
Yihe Liu, He Jiang, Li Gao, et al.
Small Methods
|
August 8, 2023
Approaching Ohmic Contacts for Ideal Monolayer MoS<sub>2</sub> Transistors Through Sulfur-Vacancy Engineering
Jiankun Xiao, Kuanglei Chen, Xiankun Zhang, et al.
Nature Communications
|
March 16, 2026
Generic logic block based on bias-gated 2D MoS<sub>2</sub> transistors
Xiaofu Wei, Zhangyi Chen, Kuanglei Chen, et al.
Nature Materials
|
January 10, 2025
Two-dimensional Czochralski growth of single-crystal MoS<sub>2</sub>
He Jiang, Xiankun Zhang, Kuanglei Chen, et al.
ACS Nano
|
April 2, 2026
Scalable Reconfigurable Circuits with Double-Gate MoS<sub>2</sub> Transistors
Kuanglei Chen, Yu Geng, Jiankun Xiao, et al.
National Science Review
|
March 13, 2026
Large-scale gate-all-around MoS<sub>2</sub> transistor array through lossless monolithic 3D integration
Chao Chen, Kuanglei Chen, Hang Zhao, et al.
Science (New York, N.Y.)
|
November 20, 2025
Atomic layer bonding contacts in two-dimensional semiconductors
Li Gao, Zhangyi Chen, Zhenghui Fang, et al.
Page
of 1