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Optics Express|August 19, 2018
GeSn lateral p-i-n photodetector on insulating substrateShengqiang Xu, Yi-Chiau Huang, Kwang Hong Lee, et al.
ACS Nano|April 28, 2021
High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release StrategyYi-Yu Zhang, Yi-Xiong Zheng, Jun-Yu Lai, et al.
Optics Express|April 1, 2020
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µmHao Zhou, Shengqiang Xu, Yiding Lin, et al.
Optics Express|May 3, 2018
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platformWei Wang, Dian Lei, Yi-Chiau Huang, et al.
Nature Communications|November 30, 2017
Low-threshold optically pumped lasing in highly strained germanium nanowiresShuyu Bao, Daeik Kim, Chibuzo Onwukaeme, et al.
Optics Express|November 2, 2019
Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm bandShengqiang Xu, Kaizhen Han, Yi-Chiau Huang, et al.
Optics Express|December 17, 2017
Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)Annie Kumar, Shuh-Ying Lee, Sachin Yadav, et al.
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