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Nanophotonics (Berlin, Germany)|December 5, 2024
High-performance near-infrared photodetectors based on gate-controlled graphene-germanium Schottky junction with split active junctionCihyun Kim, Tae Jin Yoo, Min Gyu Kwon, et al.
Nanotechnology|December 13, 2017
High-pressure oxygen annealing of Al<sub>2</sub>O<sub>3</sub> passivation layer for performance enhancement of graphene field-effect transistorsYun Ji Kim, Seung Mo Kim, Sunwoo Heo, et al.
Nanomaterials (Basel, Switzerland)|April 3, 2021
High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi<sub>2</sub>Te<sub>3</sub> NanowiresTae Jin Yoo, Wan Sik Kim, Kyoung Eun Chang, et al.
Scientific Reports|December 20, 2016
Demonstration of Complementary Ternary Graphene Field-Effect TransistorsYun Ji Kim, So-Young Kim, Jinwoo Noh, et al.
Small (Weinheim an Der Bergstrasse, Germany)|June 8, 2018
Gate-Controlled Graphene-Silicon Schottky Junction PhotodetectorKyoung Eun Chang, Tae Jin Yoo, Cihyun Kim, et al.
Nanoscale|February 7, 2017
A graphene barristor using nitrogen profile controlled ZnO Schottky contactsHyeon Jun Hwang, Kyoung Eun Chang, Won Beom Yoo, et al.
Nano Letters|August 24, 2016
Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier LoweringYonghun Kim, Ah Ra Kim, Jin Ho Yang, et al.
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